A film forming apparatus including a bell-shaped chamber having an internal space and an exhaust port; a wafer boat in the bell-shaped chamber, and in which wafers are sequentially stackable from a lower end portion to an upper end portion; a gas supply pipe passing through the bell-shaped chamber to supply gas to the bell-shaped chamber; and an injector connected to the gas supply pipe to inject gas onto the wafers, wherein the injector includes a gas flow path through which the gas supplied from the gas supply pipe flows and nozzles connected to the gas flow path, stepped surfaces are on an inner surface of the injector such that a diameter of the gas flow paths in at least two different locations within the injector are different, and lengths of the nozzles are different from each other, and correspond with the diameter of the gas flow path.

A film forming apparatus includes a film formation chamber capable of accommodating a substrate; a gas supplier including nozzles provided in an upper portion of the film formation chamber to supply a process gas onto a film formation face of the substrate, and a cooling part suppressing a temperature increase of the process gas; a heater heating the substrate to 1500° C. or higher; and a plate opposed to a bottom face of the gas supplier, where first opening parts of the nozzles are formed, in the film formation chamber, and arranged away from the bottom face, in which the plate includes a plurality of second opening parts having a smaller diameter than the first opening parts, and arranged substantially uniformly in a plane of the plate, and a partition protruded on an opposed face to the gas supplier and separating the plane of the plate into regions.

A semiconductor processing tool performs passivation layer deposition and removal in situ. A transport mechanism included in the semiconductor processing tool transfers a semiconductor structure through different deposition chambers (e.g., without breaking or removing a vacuum environment). Accordingly, the semiconductor processing tool deposits a target layer that is thinner on, or even absent from, a metal layer, such that contact resistance is reduced between a conductive structure formed over the target layer and the metal layer. As a result, electrical performance of a device including the conductive structure is improved. Moreover, because the process is performed in situ (e.g., without breaking or removing the vacuum) in the semiconductor processing tool, production time and risk of impurities in the conductive structure are reduced. As a result, throughput is increased, and chances of spoiled wafers are decreased.

According to one aspect of the technique of the present disclosure, there is provided a method of displaying substrate arrangement data, including: (a) setting each of a transport parameter for determining at least an arrangement of substrates to be loaded into a substrate retainer and carrier information of a carrier storing the substrates to be loaded into the substrate retainer; (b) creating the substrate arrangement data of a case where the substrates are loaded into the substrate retainer based on the transport parameter and the carrier information set in (a); and (c) displaying the substrate arrangement data at least comprising data representing the arrangement of the substrates in a state where the substrates are loaded in the substrate retainer.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A plasma coating an object has an object profile, and includes the steps of: providing a replaceable shield including a jet inlet, a nozzle outlet and a sidewall extending from the jet inlet to the nozzle outlet; detachably attaching the replaceable shield to a jet outlet of a plasma jet generator; placing the object at the nozzle outlet such that the object profile fits closely to the nozzle outlet edge to within a distance of at least 0.1 mm and at most 5 mm; plasma coating the object with a low-temperature, oxygen-free plasma at an operating pressure which is higher than the atmospheric pressure by providing a plasma jet in the shield via the plasma jet generator and injecting coating precursors in the plasma jet in the shield; identifying the provided shield prior to providing the plasma jet.

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

The present disclosure relates to a plasma resistant member in which a surface exposed to plasma is formed from a single crystal yttrium⋅aluminum⋅garnet (YAG) having a {100} plane, and a plasma treatment device component and a plasma treatment device using the plasma resistant member. When there are a plurality of surfaces exposed to plasma, at least a surface required to have the highest plasma resistance is formed from the single crystal YAG having a {100} plane.

There is provided a substrate processing apparatus including: an inner tube including a substrate accommodating region where substrates are accommodated along an arrangement direction; an outer tube outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at an end portion of the outer tube along the arrangement direction; and a gas guide controlling gas flow in an annular space between the inner and outer tubes. A first exhaust port A is located farthest from the second exhaust port, and faces a gas supply port A. The gas guide includes a fin provided near the gas supply port A and surrounds at least a part of an outer periphery of the gas supply port A.

The present disclosure provides a gas injector, disposed in a diffusion furnace device, the gas injector including an inner chamber, wherein a chamber wall of the inner chamber is provided with a plurality of protrusion structures, and the plurality of protrusion structures are arranged in an array on the chamber wall.