The present invention relates to a susceptor including a substrate including a carbon material and having one main surface on which a silicon water is to be placed, and another main surface facing the one main surface, in which an entire surface of the substrate is covered with a thin film including silicon carbide, the one main surface has an emissivity variation of 3% or less, and a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

The present application provides a method for manufacturing a monocrystalline silicon sheet, including: cutting a monocrystalline silicon rod along a radial or an axial direction of the monocrystalline silicon rod to obtain a monocrystalline silicon substrate; etching a porous silicon structure on a top surface and a bottom surface of the monocrystalline silicon substrate by wet etching; depositing a monocrystalline silicon thin layer on the porous silicon structure by chemical vapor deposition, so that a thickness of the monocrystalline silicon thin layer reaches a predetermined value; and striping the monocrystalline silicon thin layer from the porous silicon structure to obtain the monocrystalline silicon sheet. In the present application, the production capacity of directly manufacturing a single crystal silicon wafer by a chemical vapor deposition method can be improved, and a process for manufacturing a silicon wafer is combined with the process of a diffusion emitter conventionally belonging to cell manufacturing, so that a manufacturing cost of a solar monocrystalline silicon cell is significantly reduced.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.

A method of chemical vapor infiltration and deposition includes disposing a porous substrate within a reaction chamber, establishing a sub-atmospheric pressure within the reaction chamber, introducing a hydrocarbon reaction gas into a reaction zone of the reaction chamber to densify the porous substrate, withdrawing unreacted hydrocarbon reaction gas from the reaction chamber, the unreacted hydrocarbon reaction gas comprising hydrocarbon molecules having six or more carbon atoms, removing at least a portion of the hydrocarbon molecules having six or more carbon molecules from the unreacted hydrocarbon reaction gas by causing the portion of the hydrocarbon molecules having six or more carbon atoms to condense, and recirculating at least a portion of the unreacted hydrocarbon reaction gas back into the reaction zone.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.

A chemical vapor deposition (CVD) system for forming carbon nanotubes from solid or liquid feedstock. The system includes a reactor including a housing that includes an inlet and an outlet. The housing defines an interior for receiving the feedstock, and the interior receives inert gas. The CVD system includes a first stop valve in flow communication with the inlet and a second stop valve in flow communication with the outlet. The first and second stop valves seal the inlet and the outlet such that a static environment is formed in the interior when reacting the feedstock. A heater heats the interior to a temperature such that the feedstock is vaporized, thereby forming vaporized feedstock. The CVD system further includes a controller coupled in communication with the first and second valves and the heater. The controller is configured to selectively actuate the first and second valves and the heater.

A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

There is provided a technique of suppressing unintended substrate processing from being performed after predetermined substrate processing is ended, including a substrate support section that supports a substrate in a processing chamber; a processing gas supply section that supplies a processing gas into the processing chamber; and a moving mechanism that moves the substrate support section in the processing chamber, between a first position to which the processing gas supplied from the processing gas supply section is blown, and a second position to which the processing gas supplied from the processing gas supply section is not blown.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.