C23C16/48

Apparatus and Methods for Roll-to-Roll (R2R) Plasma Enhanced/Activated Atomic Layer Deposition (PEALD/PAALD)
20230047633 · 2023-02-16 ·

Techniques are disclosed for roll-to-roll (R2R) atomic layer deposition (ALD). R2R ALD is accomplished by arranging precursor nozzles in A/B pairs while a flexible web substrate moves underneath the A/B pairs at a uniform speed. Nozzles A of the A/B pairs continuously flow a precursor A into the process volume of the R2R ALD chamber. The plasma enhanced/activated ALD (PEALD/PAALD) embodiments utilize electron cyclotron rotation (ECR)-enhanced hollow cathode plasma sources (HCPS) where nozzles B flow activated neutrals of precursor B into the process volume. As the flexible web moves in an R2R motion, nucleates from precursor A deposited on the surface of the substrate, and neutrals of precursor B undergo a self-limiting reaction to deposit a single atomically sized ALD film/layer. In this manner, multiple ALD layers may be deposited by each successive A/B pair in a single pass of the web. There is also a heat source underneath the web to further facilitate the ALD reaction, or to support thermal ALD embodiments.

Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof
11578424 · 2023-02-14 · ·

A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

Additive manufacturing technique for placing nuclear reactor fuel within fibers

Nuclear fuel structures and methods for fabricating are disclosed herein. The nuclear fuel structure includes a plurality of fibers arranged in the structure and a multilayer fuel region within at least one fiber of the plurality of fibers. The multilayer fuel region includes an inner layer region made of a nuclear fuel material, and an outer layer region encasing the nuclear fuel material. A plurality of discrete multilayer fuel regions may be formed over a core region along the at least one fiber, the plurality of discrete multilayer fuel regions having a respective inner layer region of nuclear fuel material and a respective outer layer region encasing the nuclear fuel material. The plurality of fibers may be wrapped around an inner rod or tube structure or inside an outer tube structure of the nuclear fuel structure, providing both structural support and the nuclear fuel material of the nuclear fuel structure.

TEMPERATURE-CONTROLLED SURFACE WITH A CRYO-NANOMANIPULATOR FOR IMPROVED DEPOSITION RATE
20230023396 · 2023-01-26 · ·

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

LAMP FILAMENT HAVING A PITCH GRADIENT AND METHOD OF MAKING
20230017852 · 2023-01-19 ·

Examples disclosed herein relate to a to a pitch gradient in a lamp filament, and a method of making. In one implementation, a lamp has a bulb filled with a gas. A filament is disposed within the bulb. The filament has a plurality of coils that include a first coil having a first point. The plurality of coils includes a second coil having a second point, and a third coil having a third point. The pitch gradient is defined by a first pitch between the second point and the first point, and a second pitch between the third point and the second point. The second pitch is greater than the first pitch. The second point is 360 degrees away from the first point. The third point is 360 degrees from the second point. A terminal coil is electrically coupled to at least the first coil, the second coil, and the third coil.

System for surface modification by laser diffusion

A system for forming surface modified substrates includes a laser system, and a laser processing chamber. A laser scanner automatically controls a position of the laser beam or an x-y translating stage upon which the laser processing chamber is mounted thereon for scanning the laser beam relative to a substrate of material (M) having a bulk portion and an outer surface integrated with the bulk portion, and a coating including metal organic molecules including at least one metal X or particles of metal X on the outer surface. At laser-heated spots atoms of X from the metal coating diffuse into the outer surface to form a modified surface layer including both M and X. The modified surface layer has a thickness of 1 nm, and a 25° C. electrical conductivity ≥2.5% above or ≤2.5% below a 25° C. electrical conductivity in the bulk portion.

APPARATUS AND METHODS FOR COOLING REACTION CHAMBERS IN SEMICONDUCTOR PROCESSING SYSTEMS

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

FIBER STRUCTURES WITH EMBEDDED SENSORS
20220404212 · 2022-12-22 · ·

Methods of fabricating fiber structures with embedded sensors are provided. The method includes obtaining a scaffold fiber and forming, by 1½-D printing using laser induced chemical vapor deposition, circuitry on the scaffold fiber to provide a fiber structure with embedded sensor. The forming includes printing a solid state oscillator about the scaffold fiber, and printing a sensing device about the scaffold fiber electrically coupled to the solid state oscillator to effect, at least in part, oscillations of the solid state oscillator. The forming further includes printing an antenna about the scaffold fiber electrically connected to the solid state oscillator to facilitate in operation wireless transmitting of a signal from the fiber structure with embedded sensor.

FIBER STRUCTURES WITH EMBEDDED SENSORS
20220404212 · 2022-12-22 · ·

Methods of fabricating fiber structures with embedded sensors are provided. The method includes obtaining a scaffold fiber and forming, by 1½-D printing using laser induced chemical vapor deposition, circuitry on the scaffold fiber to provide a fiber structure with embedded sensor. The forming includes printing a solid state oscillator about the scaffold fiber, and printing a sensing device about the scaffold fiber electrically coupled to the solid state oscillator to effect, at least in part, oscillations of the solid state oscillator. The forming further includes printing an antenna about the scaffold fiber electrically connected to the solid state oscillator to facilitate in operation wireless transmitting of a signal from the fiber structure with embedded sensor.

Deposition Equipment With Adjustable Temperature Source

The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.