A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.

A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the processing chamber, applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated. The method also includes, while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.

A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.