Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.

Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.

There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing layer on surfaces defining the processing region of the semiconductor processing chamber. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber.

The instant disclosure is related to the growth of carbon-based nanostructures and associated systems and products. Certain embodiments are related to carbon-based nanostructure growth using active growth materials comprises at least two components that are capable of forming a eutectic composition with each other. In some embodiments, the growth of carbon-based nanostructures is performed using active growth materials comprising at least two types of cations.

The instant disclosure is related to the growth of carbon-based nanostructures and associated systems and products. Certain embodiments are related to carbon-based nanostructure growth using active growth materials comprises at least two components that are capable of forming a eutectic composition with each other. In some embodiments, the growth of carbon-based nanostructures is performed using active growth materials comprising at least two types of cations.

PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.

PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.

An exclusion ring for semiconductor wafer processing includes an outer circumferential segment having a first thickness and an inner circumferential segment having a second thickness, with the first thickness being greater than the second thickness. The top surface of an inner circumferential segment and the top surface of the outer circumferential segment define a common top surface for the exclusion ring. A plurality of flow paths is formed within the outer circumferential segment, with each of the flow paths extending radially through the plurality of flow paths provides for exhaust of a wafer edge gas from the pocket where a wafer has an edge thereof disposed below part of the inner circumferential portion. The exhausting of the wafer edge gas from the pocket prevents up-and-down movement of the exclusion ring when bowed wafers are processed.