Provided is an electrically heated catalytic converter including at least a conductive substrate and an electrode member that is fixed to the substrate, in which a protective film is formed on a surface of at least a portion of the electrode member. In the electrically heated catalytic converter, at least a portion of the protective film is formed of Al.sub.2O.sub.3, SiO.sub.2, a composite material of Al.sub.2O.sub.3 and SiO.sub.2, or a composite oxide including Al.sub.2O.sub.3, SiO.sub.2, or a composite material of Al.sub.2O.sub.3 and SiO.sub.2 as a major component, the protective film has an amorphous structure or a partially crystalline glass structure having a crystallization rate of 30 vol % or lower with respect to the entire portion of the protective film, and a thickness of the protective film is in a range of 100 nm to 2 μm.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Provided is a high-efficiency vanadium nitride/molybdenum carbide heterojunction hydrogen production electrocatalyst, and a preparation method and application thereof. The electrocatalyst has a heterojunction structure formed by coupling VN and Mo.sub.2C, wherein the mass ratio of VN and Mo.sub.2C is 20:1 to 50:1. The electrocatalyst couples nano-VN and Mo.sub.2C to form a VN/Mo.sub.2C heterojunction, so that the active center is increased, and the balance of the reaction kinetics of H.sup.+ adsorption and H.sub.2 desorption is facilitated, thereby greatly improving the activity of the electrocatalyst.

The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

Process for forming a multi-layer electrochromic structure, the process comprising depositing a film of a liquid mixture onto a surface of a substrate, and treating the deposited film to form an anodic electrochromic layer, the liquid mixture comprising a continuous phase and a dispersed phase, the dispersed phase comprising metal oxide particles, metal hydroxide particles, metal alkoxide particles, metal alkoxide oligomers, gels or particles, or a combination thereof having a number average size of at least 5 nm.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

A film forming device includes a bottom plate detachably provided on a bottom surface of a mist spray head. The bottom plate includes a raw material solution opening, reaction material openings, and inert gas openings formed in regions corresponding to a raw material solution ejection port, reaction material ejection ports, and inert gas ejection ports, when the bottom plate is attached to the bottom surface of the mist spray head.

A method is disclosed of forming core-shell iron oxide-polymer nanofiber composites. The method includes synthesizing composite nanofibers of polyacrylonitrile (PAN) with embedded hematite (α-Fe.sub.2O.sub.3) nanoparticles via a single-pot electrospinning synthesis; and generating a core-shell nanofiber composite through a subsequent hydrothermal growth of α-Fe.sub.2O.sub.3 nanostructures on the composite nanofibers of polyacrylonitrile (PAN) with the embedded hematite (α-Fe.sub.2O.sub.3) nanoparticles.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.