According to a first aspect of the invention, a method for producing a metal-CNT composite material is proposed. The method includes providing a layer of CNT by depositing CNT coated with a polyphenol or poly(catecholamine) coating and filling the interstices of the carbon nanotubes layer with a metal so as to form a metal matrix, in which CNT are embedded. The filling is effected by electrode position or by electroless deposition. The polyphenol or poly(catecholamine) coating is crosslinked by metal ions, the metal ions promoting, as metal seeds, adhesion and/or growth of the metal matrix during the filling step. A further aspect of the invention relates to the metal-CNT composite obtainable by the method.

Cleaning solution for cleaning and/or wetting metal surfaces, comprising at least one acid, a first surfactant, which is an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≤25° C., a second surfactant, which is selected from the group consisting of i) an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≥30° C., ii) an alkyl-polyethyleneglycol-ether having a cloud point of ≥45° C.
wherein the cloud points are determined according to European Standard EN 1890:2006, item 8.2 of German Version, with the modification that 10 wt % H.sub.2SO.sub.4 is used as solvent and that the concentration of the surfactant is 1000 mg/L.

A turbocharger compressor wheel with an aluminum proportion of at least 50 atom percent, produced by. etching a turbine wheel base body using an alkaline etchant to produce a specific etch pitting consisting of nano pores and micropores and chemical deposition of a nickel-phosphorous protective layer (19) onto the etched base body surface.

The invention relates to a washing solution for a tin plating film after electroless tin plating and before water washing. The invention also relates to a method for forming a tin plating film, the method includes a step of washing step using the washing solution. The washing solution according to the present invention is an acidic aqueous solution containing an acid, a complexing agent, a stabilizer and a chloride ion. The washing solution has a chloride ion concentration of 2 wt % or more, and a tin concentration of 0.5 wt % or less. The washing solution according to the present invention has good washing property for a tin plating film surface, and allows a tin plating film to easily maintain its properties. In addition the washing solution causes little influence on a tin plating film surface even when continuously used and is excellent in temporal stability.

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

Tubulars are immersed in electroless nickel coating solution to coat the tubulars. Prior to the coating step the tubulars are blasted with a clean medium and washed and rinsed in alkaline solution. The tubulars are arranged in a bunk for washing, rinsing and coating. LLDPE stretch wrap applied to outer portions of the tubulars prevents coating of the outer portions. The tubulars are electrically separated from the bunk and the coating solution tank, and the tank is provided with anodic protection to prevent coating of the tank. The bunk is provided with a header assembly to provide solution flow through the tubulars via nozzles on the header assembly in addition to flow caused by the vortex effect created by velocity of fluid exiting the nozzles. The bunk is arranged in the solution tank so that the tubulars are at an angle to horizontal to efficiently remove hydrogen gas. Solution flow to the header assembly is filtered to remove particulates.

A new primer for electroless plating for use in the pretreatment process for electroless plating, which is environmentally friendly, can be easily treated in fewer process steps, and can provide sufficient adhesion to the substrate. A photocurable primer for forming a metal plating film on a base material through an electroless plating process, having (a) a hyperbranched polymer having an ammonium group at a molecular terminal and a weight average molecular weight of 1,000 to 5,000,000, (b) metal fine particles, (c) a polymerizable compound having a (meth)acryloyl group, and (d) a photopolymerization initiator.

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Provided is a method of manufacturing a printed circuit nano-fiber web. A method of manufacturing a printed circuit nano-fiber web according to an embodiment of the present invention includes (1) a step of electrospinning a spinning solution including a fiber-forming ingredient to manufacture a nano-fiber web; and (2) a step of forming a circuit pattern to coat an outer surface of nano-fiber included in a predetermined region on the nano-fiber web using an electroless plating method. According to the present invention, a circuit pattern-printed nano-fiber web having flexibility and resilience suitable for future smart devices may be realized. In addition, a circuit pattern may be densely formed to a uniform thickness on a flexible nano-fiber web using an electroless plating method, and the flexible nano-fiber web may include a plurality of pores. Accordingly, since the printed circuit nano-fiber web may satisfy waterproofness and air permeability characteristics, it can be used in various future industrial fields including medical devices, such as biopatches, and an electronic device, such as smart devices.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.