Patent classifications
C23C18/1879
Structure with Conductive Pattern and Method for Manufacturing Same
Provided are: a structure with a conductive pattern that can be obtained in a simple manufacturing process and that exhibits favorable interlayer adhesion; and a method for manufacturing same. An embodiment of the present invention provides a structure with a conductive pattern, the structure comprising a base material, and a copper-containing conductive layer arranged on the surface of the base material, wherein when a principal surface of the conductive layer on the side facing the base material is a first principal surface, and a principal surface of the conductive layer on the opposite side from the first principal surface is a second principal surface, the conductive layer: has a porosity of 0.01 to 50 volume percent in a first principal surface-side region that extends from the first principal surface to a depth of 100 nm in the thickness direction of the conductive layer.
SUBSTRATE LIQUID PROCESSING METHOD AND SUBSTATE LIQUID PROCESSING APPARATUS
A substrate having a recess, a diffusion barrier layer defining the recess, and a wiring exposed at a bottom of the recess is prepared. A metal ion, having a concentration not causing precipitation of a metal even when an electroless plating liquid comes into contact therewith, is attached to the diffusion barrier layer. The metal is precipitated in the recess by supplying the electroless plating liquid into the recess in a state that the metal ion is attached to the diffusion barrier layer.
ETCHING METHOD
According to one embodiment, an etching method includes etching a surface made of a semiconductor and having a catalyst layer formed on the surface, by an etching agent in contact with the surface. The catalyst layer contains noble metal. The etching agent contains an oxidizer, a corrosive agent, and a N-containing polymer agent.
Composites and methods of making composite materials
A method of making a composite material includes disposing a carbon-based particulate material, such as graphene or carbon nanotubes, in an activation solution and activating surfaces of the carbon-based particulate material using the activation solution. Once the surfaces of the carbon-based particulate material have been activated, a metallic coating is applied to the activated surfaces to form a composite material. The composite material is then recovered as a particulate material formed having carbon-based particulate material with a metallic coating that is suitable for fusing together for forming electrical conductors, such as with an additive manufacturing technique.
Composition for Preparation of Plating Base and Plating Base Thereof
Provided is a composition for forming a plating base on which plating is applied without a pretreatment, especially any activation process for the plating base, conventionally believed to be necessary, as well as a thus-formed plating base and a method of forming a plating coat over the plating base. The plating base is a coating film formed by applying and drying a metal nanoparticle dispersion liquid or a metal nanoparticle dispersion ink in which metal nanoparticles are protected with a small amount of protecting agent. Thus, a metal film can be formed by plating without operations such as substrate cleaning or catalyst imparting and activating. Since it is not necessary to wash the substrate with acid or base solution or to heat-treat it at a high temperature, many variations of materials become available for the substrate.
PLATING METHOD
The present invention provides a plating method capable of easily performing various decorative plating processes. The plating method includes a bulge forming process of forming a bulge on an object to be plated by ejecting ink drops of first UV-curable ink from an inkjet head such that the ejected ink drops land on the object, and a plating process of plating the object having the bulge formed thereon, after the bulge forming process. Also, in the bulge forming process, the bulge is formed such that a second surface of the bulge to be plated has surface roughness different from that of a first surface of the object to be plated.
Anode active material for lithium secondary batteries
Disclosed are an anode active material for lithium secondary batteries, the anode active material comprising: a core part including a carbon-silicon complex and having a cavity therein; and a coated layer which is formed on the surface of the core part and includes a phosphor-based alloy.
Nanostructured sapphire optical fiber sensing platform
A method for fabricating a sensor includes coating an end-polished sapphire fiber with aluminum to produce a sapphire fiber having an aluminum coating, anodizing the aluminum coating to produce an aluminum oxide coating, and removing the aluminum oxide coating from a distal end of the sapphire fiber.
Composite member
A composite member includes: a substrate formed of a composite material containing a plurality of diamond grains and a metal phase; and a coating layer made of metal. The surface of the substrate includes a surface of the metal phase, and a protrusion formed of a part of at least one diamond grain of the diamond grains and protruding from the surface of the metal phase. In a plan view, the coating layer includes a metal coating portion, and a grain coating portion. A ratio of a thickness of the grain coating portion to a thickness of the metal coating portion is equal to or less than 0.80. The coating layer has a surface roughness as an arithmetic mean roughness Ra of less than 2.0 μm.
SUBSTRATE FOR PRINTED CIRCUIT BOARD, PRINTED CIRCUIT BOARD, AND METHOD FOR PRODUCING SUBSTRATE FOR PRINTED CIRCUIT BOARD
The substrate for a printed circuit board according to an embodiment of the present invention includes a base film having insulating properties, and a metal layer stacked on at least one surface of the base film, in which the base film includes a portion where a transition metal in group 10 of the periodic table is present. The transition metal in group 10 is preferably nickel or palladium. The portion where the transition metal in group 10 is present preferably includes a region having an average thickness of 500 nm and extending from an interface with the metal layer.