The present disclosure provides a surface-treated aluminum material having excellent adhesiveness to resins, on the surface of which an oxide film is formed, the oxide film comprising a surface-side porous aluminum oxide film having a thickness of 20 to 500 nm and a base-side barrier aluminum oxide film having a thickness of 3 to 30 nm, wherein small pores each having a diameter of 5 to 30 nm are formed on the porous aluminum oxide film, and the length of cracks formed in a boundary between the porous aluminum oxide film and the barrier aluminum oxide film is not more than 50% of the length of the boundary, a method for manufacturing the surface-treated aluminum material, and a surface-treated aluminum material-resin bonded body, comprising the surface-treated aluminum material and a resin that covers the surface of the oxide film formed thereon.

The present disclosure provides a surface-treated aluminum material having excellent adhesiveness to resins, on the surface of which an oxide film is formed, the oxide film comprising a surface-side porous aluminum oxide film having a thickness of 20 to 500 nm and a base-side barrier aluminum oxide film having a thickness of 3 to 30 nm, wherein small pores each having a diameter of 5 to 30 nm are formed on the porous aluminum oxide film, and the length of cracks formed in a boundary between the porous aluminum oxide film and the barrier aluminum oxide film is not more than 50% of the length of the boundary, a method for manufacturing the surface-treated aluminum material, and a surface-treated aluminum material-resin bonded body, comprising the surface-treated aluminum material and a resin that covers the surface of the oxide film formed thereon.

The present disclosure is drawn to covers for electronic devices, methods of making the covers, and electronic devices. In one example, described herein is a cover for an electronic device comprising: a substrate comprising a metal; insert molded plastic on at least one surface of the substrate; a passivation layer or a micro-arc oxidation layer applied on at least one surface of the substrate; a coating composition on the passivation layer or the micro-arc oxidation layer; an outmoid decoration layer on the mating composition; a chamfered edge on the substrate, wherein the chamfered edge cuts through the outmoid decoration layer, the coating composition, the passivation layer or the micro-arc oxidation layer, and partially through the substrate; and wherein the chamfered edge comprises; a transparent passivation layer, then an optional sealing layer, and then a transparent or color electrophoretic deposition coating layer.

An aluminum member (1) includes: a base material (2) composed of aluminum or an aluminum alloy; and an anodic oxide film (3) formed on a surface of the base material. The anodic oxide film includes: an amorphous layer (31), which is composed of an amorphous aluminum oxide and is formed on the base material (2); and a crystal layer (32), which is composed of a crystalline aluminum oxide and is formed on the amorphous layer (31). The aluminum member (1) can be obtained by forming the anodic oxide film (3) on the base material (2) by performing an anodization process on the base material (2) in an electrolytic solution, which contains boron atoms and has a pH of 7.0-12.0.

An aluminum member (1) includes: a base material (2) composed of aluminum or an aluminum alloy; and an anodic oxide film (3) formed on a surface of the base material. The anodic oxide film includes: an amorphous layer (31), which is composed of an amorphous aluminum oxide and is formed on the base material (2); and a crystal layer (32), which is composed of a crystalline aluminum oxide and is formed on the amorphous layer (31). The aluminum member (1) can be obtained by forming the anodic oxide film (3) on the base material (2) by performing an anodization process on the base material (2) in an electrolytic solution, which contains boron atoms and has a pH of 7.0-12.0.

Exemplary methods of coating a semiconductor component substrate may include submerging the semiconductor component substrate in an alkaline electrolyte. The alkaline electrolyte may include yttrium. The methods may include igniting a plasma at a surface of the semiconductor component substrate for a period of time less than or about 12 hours. The methods may include forming a yttrium-containing oxide on the semiconductor component substrate. A surface of the yttrium-containing oxide may be characterized by a yttrium incorporation of greater than or about 10 at. %.

Disclosed are an electronic device including a housing having a matte surface and a method of manufacturing the same. An electronic device according to various embodiments of the disclosure is an electronic device including a housing. The housing may include a base material including an aluminum alloy, a plurality of pits adjacently formed on a surface of the base material, and a crystal grain boundary protrusion part formed as a crystal grain boundary of the surface of the base material portion protrudes on the surface. A method of manufacturing a housing for an electronic device may include an etching step of generating irregularities on a surface of a base material including an aluminum alloy in a way to etch the base material by dipping the base material into an etching solution containing chloride ions, and an anodizing step of forming an anodizing layer on the surface of the base material by dipping, into an anodizing solution, the base material on which the etching step has been completed and applying a current to the base material by using the base material as an anode.

Method for manufacturing a fire-resistant part of an air conditioning system for an air or rail transport vehicle, characterized in that it includes at least the following steps: a step of obtaining a part including at least one aluminum alloy surface portion, and a step of treating the aluminum alloy surface portion by use of micro-arc oxidation in order to produce a ceramic coating on the surface portion.

In one example, an electronic device housing may include a substrate, a micro-arc oxidation layer formed on a surface of the substrate, and an electroless plating layer formed on the micro-arc oxidation layer. Example electroless plating layer may be one of an electroless tin plating layer and an electroless silver plating layer. Further, the electronic device housing may include an electrophoretic deposition layer formed on the electroless plating layer.

Provided is an anodized aluminum film formed on a surface of a substrate that comprises aluminum or an aluminum alloy, the anodized aluminum film having a structure constituted of a single anodized film layer or a structure composed of superposed anodized film layers of two or more different kinds, wherein the outermost anodized film has a degree of film formation, defined by equation (1), of 1.3 or more and the proportion of the thickness of this anodized film in the entire film thickness is 3% or higher. Thus, the anodized aluminum film is inhibited from cracking in bent portions. As a result, the substrate is inhibited from corroding in corrosive-gas atmospheres, and a decrease in withstand voltage characteristics due to film cracking is inhibited. With this anodized aluminum film, enhanced withstand voltage characteristics can hence be attained:
Degree of film formation=(thickness of anodized film)/(substrate thickness loss by anodization)  (1).