An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

The disclosure discloses a manufacturing method and apparatus for an electronic component, and belongs to the technical field of manufacture of photovoltaic devices. The manufacturing method includes: putting a semiconductor device into a cathode region, and driving the semiconductor device to move in the cathode region, at the same time, connecting line plating rollers to a power source, and driving the line plating rollers to rotate, so that a surface of the semiconductor device is plated with metal lines in a movement direction thereof by conductive parts located in a circumferential direction of an outer side of each of the line plating rollers; the conductive parts include line plating regions and deplating regions; an anode is disposed on outer sides of the deplating regions and is electrically connected to a positive electrode of the power source by the conductive parts in the deplating regions.

The disclosure discloses a manufacturing method and apparatus for an electronic component, and belongs to the technical field of manufacture of photovoltaic devices. The manufacturing method includes: putting a semiconductor device into a cathode region, and driving the semiconductor device to move in the cathode region, at the same time, connecting line plating rollers to a power source, and driving the line plating rollers to rotate, so that a surface of the semiconductor device is plated with metal lines in a movement direction thereof by conductive parts located in a circumferential direction of an outer side of each of the line plating rollers; the conductive parts include line plating regions and deplating regions; an anode is disposed on outer sides of the deplating regions and is electrically connected to a positive electrode of the power source by the conductive parts in the deplating regions.

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

A microbe-resistant coating composition or paint including an antimicrobial agent is described. The antimicrobial agent is an inorganic bismuth-containing compound, and may be used in conjunction with other bismuth-containing compounds or other biocidal agents or methods. A method of treating an electrodeposition system for bacterial and/or fungal contamination is also described by adding an antimicrobial agent to at least a portion of the electrodeposition system.

The invention relates to an aqueous inhibition composition for the inhibition of electrochemical metal plating on polymer surfaces, said inhibition composition comprising an inhibition agent selected from the group of compounds having at least one sulfur and at least one nitrogen atom as well as to a method for the inhibition of an insulated surface of a rack area. The inventive inhibition composition is capable to provide a solution for prohibiting unintended metallization on insulated areas of the racks when non-chromic etching is utilized for plating on plastics processes.

The invention relates to an aqueous inhibition composition for the inhibition of electrochemical metal plating on polymer surfaces, said inhibition composition comprising an inhibition agent selected from the group of compounds having at least one sulfur and at least one nitrogen atom as well as to a method for the inhibition of an insulated surface of a rack area. The inventive inhibition composition is capable to provide a solution for prohibiting unintended metallization on insulated areas of the racks when non-chromic etching is utilized for plating on plastics processes.

An electroplating cell employable with an electroplating tool and method of operating the same. In one embodiment, the electroplating cell includes a cover configured to substantially seal the electroplating cell to an outside atmosphere during an electroplating process, and a porous tube couplable to an inert gas source configured to bubble an inert gas through an electrolyte containable therein. The electroplating cell also includes an anode, encased in an envelope of a semipermeable membrane, formed with an alloy of electroplating material, and a magnet configured to orient an axis of magnetization of the electroplating material for application to a wafer couplable thereto during an electroplating process.