An electrode of a chemical cell includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition for reduction of carbon dioxide (CO.sub.2) in the chemical cell, and a catalyst arrangement disposed along each conductive projection of the array of conductive projections, the catalyst arrangement including a copper-based catalyst and an iron-based catalyst for the reduction of carbon dioxide (CO.sub.2) in the chemical cell.

An electrode of a chemical cell includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition for reduction of carbon dioxide (CO.sub.2) in the chemical cell, and a catalyst arrangement disposed along each conductive projection of the array of conductive projections, the catalyst arrangement including a copper-based catalyst and an iron-based catalyst for the reduction of carbon dioxide (CO.sub.2) in the chemical cell.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

Methods of treating metal nanocrystals are provided. In embodiments, such a method comprises exposing metal nanocrystals comprising a metal and characterized by at least one twinning boundary therein, to a plating solution comprising a reducing agent and coating metal cations comprising a different metal, under conditions to form a coating of the different metal on surfaces of the metal nanocrystals via electroless deposition by chemical reduction of the coating metal cations, thereby providing coated metal nanocrystals. Methods of forming bulk nanostructured metal alloys from the coated metal nanocrystals are also provided.

Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

A coating made of platinum-gold alloy is provided, together with a method of its preparation by electrodeposition. The alloy is composed of more than 50 atomic percent platinum. The microstructure of the alloy consists of generally ellipsoidal grains. More than half of the grains have a major axis of 10 nm or less.

Various aspects according to the instant disclosure relate to a method of electrodeposition of zinc. The method includes independently controlling at least one of an electrical peak current and a duty cycle. The method further includes depositing the zinc on a substrate.

The technology described herein sets forth methods of making low stress or stress free coatings and articles using electrodeposition without the use of stress reducing agents in the deposition process. The articles and coatings can be layered or nanolayered wherein in the microstructure/nanostructure and composition of individual layers can be independently modulated.

A method of electroplating nanograined copper on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; and electroplating the substrate in the electroplating bath to form the nanograined copper at room temperature. The suppressor is a ployether polyol compound, the nanograined copper has an average grain size of about 100 nm, and the nanograined copper has a resistivity of about 1.78-1.90 μOhm.Math.cm. A nanograined copper prepared according to the method is also disclosed.

There are provided a silver-plated product having a more excellent wear resistance than that of conventional silver-plated products, and a method for producing the same. The method comprises the steps of: preparing a silver-plating solution which is an aqueous solution containing silver potassium cyanide or silver cyanide, potassium cyanide or sodium cyanide, and a benzothiazole or a derivative thereof; and forming a surface layer of silver on a base material by electroplating at a liquid temperature and at a current density in the silver-plating solution so as to satisfy (BC/A).sup.2/D≥10 (° C..sup.2.Math.dm.sup.2/A) assuming that a concentration of free cyanide in the silver-plating solution is A (g/L), that a concentration of a benzothiazole content of the benzothiazole or derivative thereof in the silver-plating solution is B (g/L), that the liquid temperature of the silver-plating solution is C (° C.) and that the current density during the electroplating is D (A/dm.sup.2).