A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×10.sup.17 cm.sup.−3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×10.sup.14 cm.sup.−3 and 1×10.sup.17 cm.sup.−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×10.sup.17 cm.sup.−3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×10.sup.14 cm.sup.−3 and 1×10.sup.17 cm.sup.−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.

The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.

A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.

A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.

A method for producing a silicon anode for secondary batteries. Mesoporous silicon is used for the anode to provide space for volume expansion in the course of intercalation, especially of lithium ions. However, instead of coating a metal film with silicon, here metal is deposited onto a monocrystalline etched silicon wafer. It is essential that the silicon is monocrystalline and that the two flat sides of the wafer are (100)-oriented, i.e., perpendicular to the (100)-direction of the volumetric crystal.

A method for producing a silicon anode for secondary batteries. Mesoporous silicon is used for the anode to provide space for volume expansion in the course of intercalation, especially of lithium ions. However, instead of coating a metal film with silicon, here metal is deposited onto a monocrystalline etched silicon wafer. It is essential that the silicon is monocrystalline and that the two flat sides of the wafer are (100)-oriented, i.e., perpendicular to the (100)-direction of the volumetric crystal.