This disclosure relates to methods of growing crystalline layers on amorphous substrates by way of an ultra-thin seed layer, methods for preparing the seed layer, and compositions comprising both. In an aspect of the invention, the crystalline layers can be thin films. In a preferred embodiment, these thin films can be free-standing.

This disclosure relates to methods of growing crystalline layers on amorphous substrates by way of an ultra-thin seed layer, methods for preparing the seed layer, and compositions comprising both. In an aspect of the invention, the crystalline layers can be thin films. In a preferred embodiment, these thin films can be free-standing.

Provided herein is a method and a device for continuous synthesis of graphene. The device includes a container having a space for holding a carbon source, wherein the container has an entry opening for receiving the carbon source material, at least two electrodes for applying an electrical current through the space for joule heating the carbon source, wherein the space for joule heating the carbon source is between the at least to electrodes, and a movement component for moving the carbon source, with respect to the container, into the entry opening in a first direction and the at least two electrodes apply the electrical current in a second direction, wherein the first direction is not the same as the second direction.

It is an object to provide a method for producing a substrate for epitaxial growth having a higher degree of biaxial crystal orientation without forming an irregular part a3. The method for producing a substrate for epitaxial growth comprising a step of laminating a metal base material and a copper layer having an fcc rolling texture by surface-activated bonding, a step of applying mechanical polishing to the copper layer, and a step of carrying out orientation heat treatment of the copper layer, wherein the copper layer is laminated in such a way that, when ratios of the (200) plane of the copper layer before laminated and of the copper layer after laminated when measured by XRD are I0.sub.Cu and I0.sub.CLAD, respectively and ratios of the (220) plane of the copper layer before laminated and of the copper layer after laminated are I2.sub.Cu and I2.sub.CLAD, respectively, I0.sub.Cu<20%, I2.sub.Cu=70 to 90%, and I0.sub.CLAD<20%, I2.sub.CLAD=70 to 90% and I0.sub.CLAD−I0.sub.Cu<13%.

It is an object to provide a method for producing a substrate for epitaxial growth having a higher degree of biaxial crystal orientation without forming an irregular part a3. The method for producing a substrate for epitaxial growth comprising a step of laminating a metal base material and a copper layer having an fcc rolling texture by surface-activated bonding, a step of applying mechanical polishing to the copper layer, and a step of carrying out orientation heat treatment of the copper layer, wherein the copper layer is laminated in such a way that, when ratios of the (200) plane of the copper layer before laminated and of the copper layer after laminated when measured by XRD are I0.sub.Cu and I0.sub.CLAD, respectively and ratios of the (220) plane of the copper layer before laminated and of the copper layer after laminated are I2.sub.Cu and I2.sub.CLAD, respectively, I0.sub.Cu<20%, I2.sub.Cu=70 to 90%, and I0.sub.CLAD<20%, I2.sub.CLAD=70 to 90% and I0.sub.CLAD−I0.sub.Cu<13%.

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

A cobalt-free single crystal composite material, and a preparation method therefor and a use thereof. The cobalt-free single crystal material is of a core-shell structure, the core layer is the cobalt-free single crystal material, and the shell layer is prepared from TiNb.sub.2O.sub.7 and conductive lithium salt. The TiNb.sub.2O.sub.7 and the conductive lithium salt are selected as materials of the shell layer to coat the cobalt-free single crystal material, thereby improving the lithium ion conductivity of the cobalt-free single crystal material, and further improving the capacity and the first effect of the material.

A cobalt-free single crystal composite material, and a preparation method therefor and a use thereof. The cobalt-free single crystal material is of a core-shell structure, the core layer is the cobalt-free single crystal material, and the shell layer is prepared from TiNb.sub.2O.sub.7 and conductive lithium salt. The TiNb.sub.2O.sub.7 and the conductive lithium salt are selected as materials of the shell layer to coat the cobalt-free single crystal material, thereby improving the lithium ion conductivity of the cobalt-free single crystal material, and further improving the capacity and the first effect of the material.

Provided are Ce/Co/Cu permanent magnet alloys containing certain refractory metals, such as Ta and/or Hf, and optionally Fe which represent economically more favorable alternative to Sm-based magnets with respect to both material and processing costs and which retain and/or improve magnetic characteristics useful for GAP MAGNET applications.

A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.