It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

Methods and systems are provided for a homogenous, single crystal, electrically conductive, and narrow bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures. The single crystalline PbSe nanostructure can be exposed following an isolation process (e.g., etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.

Provided are novel transition metal dichalcogenides having a platelet structure and comprising a 2H phase region and/or a 3R phase region. The platelets exhibit a narrow size distribution and comparatively high surface area and edge area, which characteristics render the platelets especially suitable for catalysis applications, as well as use in electronic devices. Also provided are methods of synthesizing the disclosed transition metal dichalcogenide platelets.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

Provided are Ce/Co/Cu permanent magnet alloys containing certain refractory metals, such as Ta and/or Hf, and optionally Fe which represent economically more favorable alternative to Sm-based magnets with respect to both material and processing costs and which retain and/or improve magnetic characteristics useful for GAP MAGNET applications.

By widening a terrace on a crystal surface on a bottom face of a recess by step flow caused by heating, a flat face is formed on the bottom face of the recess, a two-dimensional material layer made of a two-dimensional material is formed on the formed flat face, and then a device made of the two-dimensional material layer is produced.

A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and comprising a portion into which dislocation defects are introduced or an amorphous portion.

A single-crystal-type multi-element positive electrode material, and a preparation method therefor and an application thereof.