A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A structure includes a semiconductor substrate, and a polycrystalline resistor region over the semiconductor substrate. The polycrystalline resistor region includes a semiconductor material in a polycrystalline morphology. A dopant-including polycrystalline region is between the polycrystalline resistor region and the semiconductor substrate.

Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] M.sub.x−mA.sub.ySb.sub.z (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Disclosed is a (K,Na)NbO.sub.3 (abbreviated by “KNN”)-based single crystal ceramic. The KNN-based single crystal ceramic according to the present disclosure is formulated by (K.sub.0.5−x/2Na.sub.0.5−x/2−y□.sub.y/2M.sub.x+y/2)Nb.sub.1−x/3+yO.sub.3, wherein M indicates a metal having a different valence from Na, and □ indicates a metal vacancy. The above formulated KNN-based single crystal ceramic allows compensating for the volatilization of Na in a growing grain due to the addition of M.sup.2+ ions, and substituting M.sup.2+ ions for Na.sup.+ ions to form metal vacancies, thereby making possible the single crystal growth.

Disclosed is a (K,Na)NbO.sub.3 (abbreviated by “KNN”)-based single crystal ceramic. The KNN-based single crystal ceramic according to the present disclosure is formulated by (K.sub.0.5−x/2Na.sub.0.5−x/2−y□.sub.y/2M.sub.x+y/2)Nb.sub.1−x/3+yO.sub.3, wherein M indicates a metal having a different valence from Na, and □ indicates a metal vacancy. The above formulated KNN-based single crystal ceramic allows compensating for the volatilization of Na in a growing grain due to the addition of M.sup.2+ ions, and substituting M.sup.2+ ions for Na.sup.+ ions to form metal vacancies, thereby making possible the single crystal growth.

A process for producing a lithium-manganese-nickel oxide spinel material includes maintaining a solution comprising a dissolved lithium compound, a dissolved manganese compound, a dissolved nickel compound, a hydroxycarboxylic acid, a polyhydroxy alcohol, and, optionally, an additional metallic compound, at an elevated temperature T.sub.1, where T.sub.1 is below the boiling point of the solution, until the solution gels. The gel is maintained at an elevated temperature until it ignites and burns to form a Li—Mn—Ni—O powder. The Li—Mn—Ni—O powder is calcined to burn off carbon and/or other impurities present in the powder. The resultant calcined powder is optionally subjected 1 to microwave treatment, to obtain a treated powder, which is annealed to crystallize the powder. The resultant annealed material is optionally subjected to microwave treatment. At least one of the microwave treatments is carried out. The lithium-manganese-nickel oxide spinel material is thereby obtained.

A process for producing a lithium-manganese-nickel oxide spinel material includes maintaining a solution comprising a dissolved lithium compound, a dissolved manganese compound, a dissolved nickel compound, a hydroxycarboxylic acid, a polyhydroxy alcohol, and, optionally, an additional metallic compound, at an elevated temperature T.sub.1, where T.sub.1 is below the boiling point of the solution, until the solution gels. The gel is maintained at an elevated temperature until it ignites and burns to form a Li—Mn—Ni—O powder. The Li—Mn—Ni—O powder is calcined to burn off carbon and/or other impurities present in the powder. The resultant calcined powder is optionally subjected 1 to microwave treatment, to obtain a treated powder, which is annealed to crystallize the powder. The resultant annealed material is optionally subjected to microwave treatment. At least one of the microwave treatments is carried out. The lithium-manganese-nickel oxide spinel material is thereby obtained.

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.