Provided is a method of manufacturing an oriented steel plate having two or more regions in each of which a crystal orientation is arranged in a specific direction. In the method, at least two single crystal steels are brought into contact with a principal surface of a polycrystalline steel plate so that crystal orientations of the single crystal steels and are arranged in different directions, and heat treatment of the single crystal steels and the polycrystalline steel plate is performed. This causes crystal growth following the crystal orientations of the single crystal steels to occur in the polycrystalline steel plate. Then, two or more single crystal steels having different crystal orientations are formed in the polycrystalline steel plate.

Provided is a method of manufacturing an oriented steel plate having two or more regions in each of which a crystal orientation is arranged in a specific direction. In the method, at least two single crystal steels are brought into contact with a principal surface of a polycrystalline steel plate so that crystal orientations of the single crystal steels and are arranged in different directions, and heat treatment of the single crystal steels and the polycrystalline steel plate is performed. This causes crystal growth following the crystal orientations of the single crystal steels to occur in the polycrystalline steel plate. Then, two or more single crystal steels having different crystal orientations are formed in the polycrystalline steel plate.

Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing/protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing/protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing/protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing/protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.