A method of forming an organic solid crystal (OSC) thin film includes forming a layer of molecular feedstock over a surface of a substrate, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form the organic solid crystal thin film.

Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF.sub.4, etc.), chlorine (e.g., SiCl.sub.4), or a mixture thereof.

Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF.sub.4, etc.), chlorine (e.g., SiCl.sub.4), or a mixture thereof.

A cathode particle has a core and an outer layer. The core includes a lithium (Li) transition metal (M) oxide. The outer layer is disposed conformally around and substantially encloses the core. The core facilitates oxygen anion redox activity and M cation redox activity. The outer layer substantially prevents oxygen anion redox and oxygen loss in the outer layer. The outer layer of the cathode particle may have a first crystal structure. The outer layer's first crystal structure may be at least one of a layered crystal structure or a spinel crystal structure. The core of the cathode particle may have a second crystal structure that is a layered crystal structure. The core may have a single-crystalline structure. The outer layer may be LiMn.sub.0.75Ni.sub.0.25O.sub.2 or LiMn.sub.0.5Ni.sub.0.5O.sub.4.

Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

The present invention provides a crystal of a europium compound containing europium. The present invention enables the preparation of a crystal of a europium compound having a powder X-ray diffraction pattern having a first diffraction peak in diffraction angle (2θ) range of 34.3° to 36.1° in which a half width of the first diffraction peak is 1.8° or less, and/or having a second diffraction peak in diffraction angle (2θ) range of 28.6° to 29.6° and a third diffraction peak in diffraction angle (2θ) range of 36.8° to 38.4° in which a half width of the second diffraction peak is 1.0° or less and a half width of the third diffraction peak is 1.6° or less, and being at least one compound selected from compounds represented by formulae (1) to (4):

EuCl.sub.x  (1)

Eu(OH).sub.2  (2)

Eu(OH).sub.2Cl  (3)

EuOCl  (4) x is 0.05 or more and 5 or less.

The present invention provides a crystal of a europium compound containing europium. The present invention enables the preparation of a crystal of a europium compound having a powder X-ray diffraction pattern having a first diffraction peak in diffraction angle (2θ) range of 34.3° to 36.1° in which a half width of the first diffraction peak is 1.8° or less, and/or having a second diffraction peak in diffraction angle (2θ) range of 28.6° to 29.6° and a third diffraction peak in diffraction angle (2θ) range of 36.8° to 38.4° in which a half width of the second diffraction peak is 1.0° or less and a half width of the third diffraction peak is 1.6° or less, and being at least one compound selected from compounds represented by formulae (1) to (4):

EuCl.sub.x  (1)

Eu(OH).sub.2  (2)

Eu(OH).sub.2Cl  (3)

EuOCl  (4) x is 0.05 or more and 5 or less.

An electrophotographic photosensitive member includes a support and a photosensitive layer in this order. The photosensitive layer contains a chlorogallium phthalocyanine crystal obtained by mixing a hydroxygallium phthalocyanine crystal and an aqueous hydrochloric acid solution.

Method for creating a flexible, multistable element (5): a silicon component (S) is etched with a beam (P) connecting two ends (E1, E2) of a rigid mass (MU) having a cross-section more than ten times that of said beam (P), SiO.sub.2 is grown at 1100° C. for a duration adjusted to obtain, on said beam (P), a first ratio (RA) of more than 1 between the section of a first peripheral layer (CP1) of SiO.sub.2, and that of a first silicon core (A1), and, on said mass (MU), a second ratio (RB) between the section of a second peripheral layer (CP2) of SiO.sub.2 and that of a second silicon core (A2), which is less than a hundredth of said first ratio (RA); cooling to ambient temperature is performed, to deform said beam (P) by buckling when said mass (MU) cools and contracts more than said beam (P).