A compound strontium fluoroborate, nonlinear optical crystal of strontium fluoroborate, preparation method thereof; the chemical formula of the compound is SrB5O7F3, its molecular weight is 310.67, and it is prepared by solid-state reaction; the chemical formula of the crystal is SrB5O7F3, its molecular weight is 310.67, the crystal is of the orthorhombic series, the space group is Ccm21, and the crystal cell parameters are=10.016(6) Å, b=8.654(6)(4) Å, c=8.103(5) Å, Z=4, and V=702.4(8) Å3. A SrB5O7F3 nonlinear optical crystal has uses in the preparation of a harmonic light output when doubling, tripling, quadrupling, quintupling, or sextupling the frequency of a 1064-nm fundamental-frequency light outputted by a Nd:YAG laser, or the generation of a deep-ultraviolet frequency doubling light output lower than 200 nm, or in the preparation of a frequency multiplier, upper or lower frequency converter, or an optical parametric oscillator.

A compound strontium fluoroborate, nonlinear optical crystal of strontium fluoroborate, preparation method thereof; the chemical formula of the compound is SrB5O7F3, its molecular weight is 310.67, and it is prepared by solid-state reaction; the chemical formula of the crystal is SrB5O7F3, its molecular weight is 310.67, the crystal is of the orthorhombic series, the space group is Ccm21, and the crystal cell parameters are=10.016(6) Å, b=8.654(6)(4) Å, c=8.103(5) Å, Z=4, and V=702.4(8) Å3. A SrB5O7F3 nonlinear optical crystal has uses in the preparation of a harmonic light output when doubling, tripling, quadrupling, quintupling, or sextupling the frequency of a 1064-nm fundamental-frequency light outputted by a Nd:YAG laser, or the generation of a deep-ultraviolet frequency doubling light output lower than 200 nm, or in the preparation of a frequency multiplier, upper or lower frequency converter, or an optical parametric oscillator.

Provided is a method of manufacturing MoS.sub.2 having a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoS.sub.2 to the 1T crystal structure by reacting MoS.sub.2 having the 2H crystal structure with CO gas. The phase transition includes annealing the MoS.sub.2 having the 2H crystal structure in an atmosphere including CO gas.

Provided is a method of manufacturing MoS.sub.2 having a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoS.sub.2 to the 1T crystal structure by reacting MoS.sub.2 having the 2H crystal structure with CO gas. The phase transition includes annealing the MoS.sub.2 having the 2H crystal structure in an atmosphere including CO gas.

A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

A single-crystal-type multi-element positive electrode material, and a preparation method therefor and an application thereof.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of molecular feedstock over a surface of a substrate, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form the organic solid crystal thin film.