A method for manufacturing a semiconductor for a solar cell and other applications is disclosed. A separating layer may be introduced into a mold having an interior defining a shape of a solar cell or other substantially planer object. A silicon nitride coating may be applied onto one or more interior surfaces of the mold. A planar capillary space is formed along the conductive layer. The silicon is melted under an ultra-low oxygen content cover atmosphere and allowed to flow into the capillary space. The melted silicon is then cooled within the capillary space such that the silicon forms one part of a P-N junction in the body of the semiconductor.

The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppma5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.00510.sup.4 to 20010.sup.4.

A stirring apparatus of an ingot casting furnace includes a rotating shaft and at least one fin. The fin is provided onto the rotating shaft, and has a first edge, a second edge of unequal length provided correspondingly, and a third edge connecting the first and the second edges. The rotating shaft can be driven to rotate, which consequently drives the at least one fin to stir materials in a crucible. The length of the first edge is different from that of the second edge in order for the materials in the crucible can be mixed with dopants more uniformly during the stirring process to produce ingots of stable quality.

Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppma5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.00510.sup.4 to 20010.sup.4.

Casting polycrystalline silicon includes placing a bottomless cooling crucible divided at least partially in the axis direction into a plurality of parts in the peripheral direction and having an inner surface coated with a release agent containing nitrogen, in an induction coil of a chamber charged with an inert gas; melting a raw material of polycrystalline silicon in the bottomless cooling crucible by electromagnetic induction heating using the induction coil; and pulling out the molten silicon downward while cooling and solidifying it. Pullout of the solidified molten silicon is performed through adjusting the carbon concentration of the molten silicon to 4.010.sup.17 atoms/cm.sup.3 or more to 6.010.sup.17 atoms/cm.sup.3 or less, the oxygen concentration thereof to 0.310.sup.17 atoms/cm.sup.3 or more to 5.010.sup.17 atoms/cm.sup.3 or less, and the nitrogen concentration to 8.010.sup.13 atoms/cm.sup.3 or more to 1.010.sup.18 atoms/cm.sup.3 or less.

A semiconductor compound injection synthesis method relating to the synthesis of semiconductor materials, being implemented on the basis of a synthesis system. The synthesis system adopts an open gas source device. The method includes: placing materials, probing the open gas source device, melting metal materials, and gasifying the gas source material to complete the synthesis. Beneficial effects: in the synthesis method of the present invention, the lower part of the baffle of the open gas source device is a reaction chamber. During the synthesis, the contact area between the gas source material and the melt is at least 22 times the contact area of the traditional double-tube method. In the present invention, there is no isolation of the covering agent in the reaction chamber, and the two reaction elements are always in contact at the liquid surface. In a specific implementation case, when the method of the present invention is used to synthesize phosphating steel materials, compared with the traditional double-tube injection method, the efficiency of the method is improved by 12 times.

A device and method for centrifugally synthesizing and growing a compound crystal, which relate to the field of preparation of compound semiconductors. The device comprises a furnace body and a crucible in the furnace body, wherein a sealing groove is formed in the top of the crucible, a sealing cover matching the sealing groove is provided, and the crucible is connected to a centrifugal electric motor outside the furnace body by means of a crucible rod. The method comprises the steps of placing a raw material, assembling the device, sealing the crucible, performing centrifugal synthesis, and growing a crystal.