Patent classifications
C30B11/12
Superconductor-semiconductor fabrication
A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.
Superconductor-semiconductor fabrication
A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.
Concentric flow reactor
A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.
Concentric flow reactor
A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.
NANOWIRES NETWORK
The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, a pharmaceutical composition 10 comprising the network of nanowires, to the use of the network of nanowires and to the use of the nonwoven material.
NANOWIRES NETWORK
The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, a pharmaceutical composition 10 comprising the network of nanowires, to the use of the network of nanowires and to the use of the nonwoven material.
Nanostructured battery active materials and methods of producing same
Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.
Nanostructured battery active materials and methods of producing same
Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.
NON-CONTIGUOUS CHANNEL BONDING
This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.
NON-CONTIGUOUS CHANNEL BONDING
This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.