A system and method for producing a single crystal can prevent calculation and setting mistakes and provide an adequate correction amount in the next batch. A single crystal manufacturing system includes a pulling-up apparatus that calculates a diameter measurement value of a single crystal during a pulling-up process, calculates a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controls crystal pulling-up conditions based on the first diameter. A diameter measuring apparatus measures a diameter of the single crystal pulled up by the pulling-up apparatus to calculate a second diameter of the single crystal. A database server acquires the first diameter and the second diameter. The database server calculates a correction amount of the diameter correction coefficient from the first and second diameters obtained at diameter measurement positions which coincide with each other under room temperature.

A crystal puller apparatus comprises a pulling assembly to pull a crystal from a silicon melt at a pull speed; a crucible that contains the silicon melt; a heat shield above a surface of the silicon melt; a lifter to change a gap between the heat shield and the surface of the silicon melt; and one or more computing devices to determine an adjustment to the gap using a Pv-Pi margin, at a given length of the crystal, in response to a change in the pull speed. The computer-implemented method by a computing device comprises determining a pull-speed command signal to control a diameter of the crystal; determining a lifter command signal to control a gap between a heat shield and a surface of a silicon melt from which the crystal is grown; and determining an adjustment to the gap, in response to a different pull-speed, using a Pv-Pi margin.

A single crystal manufacturing apparatus 10 according to the present invention is provided with a single crystal puller pulling up a single crystal 15 from a melt 13, a camera 18 photographing a fusion ring generated at the boundary between the melt 13 and the single crystal 15 and an computer 24 processing a photographed image taken by the camera 18. The computer 24 projects and converts the fusion ring appearing in the photographed image taken by the camera 18 on a reference plane corresponding to the liquid level position of the melt based on an installation angle and a focal length of the camera and calculates a diameter of the single crystal 15 from a shape of the fusion ring on the reference plane.

A single crystal manufacturing apparatus 10 according to the present invention is provided with a single crystal puller pulling up a single crystal 15 from a melt 13, a camera 18 photographing a fusion ring generated at the boundary between the melt 13 and the single crystal 15 and an computer 24 processing a photographed image taken by the camera 18. The computer 24 projects and converts the fusion ring appearing in the photographed image taken by the camera 18 on a reference plane corresponding to the liquid level position of the melt based on an installation angle and a focal length of the camera and calculates a diameter of the single crystal 15 from a shape of the fusion ring on the reference plane.

A system and a method for controlling temperature of semiconductor single crystal growth. The system includes: an image collection apparatus, configured to capture an image of an edge line of a crystal rod that grows at a solid-liquid interface, so as to determine the width of the edge fine at the interface; a heating apparatus, configured to heat a crucible; and a temperature control apparatus, configured to control the heating power of the heating apparatus, and the temperature control apparatus controls the heating power of the heating apparatus according to the width of the edge line.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.

An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.

An apparatus pulls a single crystal of semiconductor material by the Czochralski (CZ) method from a melt. The apparatus includes: a crucible that accommodates the melt; a resistance heater around the crucible; a camera system for observing a phase boundary between the melt and a growing single crystal, the camera system having an optical axis; a heat shield in frustoconical form with a narrowing diameter in a region at its lower end and arranged above the crucible and surrounding the growing single crystal; and an annular element, which is configured to capture particles, that projects inward from an inner side face of the heat shield and has an arrestor edge directed upward at an inner end of the annular element. The optical axis of the camera system runs between the arrestor edge and the growing single crystal. The annular element is releasably connected to the heat shield.

An apparatus pulls a single crystal of semiconductor material by the Czochralski (CZ) method from a melt. The apparatus includes: a crucible that accommodates the melt; a resistance heater around the crucible; a camera system for observing a phase boundary between the melt and a growing single crystal, the camera system having an optical axis; a heat shield in frustoconical form with a narrowing diameter in a region at its lower end and arranged above the crucible and surrounding the growing single crystal; and an annular element, which is configured to capture particles, that projects inward from an inner side face of the heat shield and has an arrestor edge directed upward at an inner end of the annular element. The optical axis of the camera system runs between the arrestor edge and the growing single crystal. The annular element is releasably connected to the heat shield.

A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ.Math.cm when the dopant is arsenic.