The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of the monocrystal ingot by comparing the predicted interface shape of the monocrystal ingot with the targeted interface shape of the monocrystal ingot. Therefore, the interface shape of the growing ingot may be predicted during the growing process of the monocrystal ingot, and the process conditions may be controlled to grow the silicon ingot in the targeted interface shape.

The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of the monocrystal ingot by comparing the predicted interface shape of the monocrystal ingot with the targeted interface shape of the monocrystal ingot. Therefore, the interface shape of the growing ingot may be predicted during the growing process of the monocrystal ingot, and the process conditions may be controlled to grow the silicon ingot in the targeted interface shape.

A single crystal pulling apparatus including: a remelting detection apparatus which detects that remelting of a lower end portion of the semiconductor single crystal is completed from a change in weight of the semiconductor single crystal when the lower end portion of the semiconductor single crystal is immersed in the melt to be remolten by using the wire; and a lowermost end detection apparatus which detects a lowermost end of the semiconductor single crystal from a position where no current flows between the semiconductor single crystal and the melt when the semiconductor single crystal is taken up with the use of the wire while applying a voltage between the semiconductor single crystal and the melt by applying a voltage between the crucible and the wire.

A single crystal pulling apparatus including: a remelting detection apparatus which detects that remelting of a lower end portion of the semiconductor single crystal is completed from a change in weight of the semiconductor single crystal when the lower end portion of the semiconductor single crystal is immersed in the melt to be remolten by using the wire; and a lowermost end detection apparatus which detects a lowermost end of the semiconductor single crystal from a position where no current flows between the semiconductor single crystal and the melt when the semiconductor single crystal is taken up with the use of the wire while applying a voltage between the semiconductor single crystal and the melt by applying a voltage between the crucible and the wire.

A crystal growing system can include a spool-balanced seed lift assembly for rotating and lifting a seed crystal supported by a cable. The seed crystal is supported along and rotated about a lift axis. The spool-balanced seed lift assembly includes a spool that rotates on, and has a center of gravity along, an axis that intersects the lift axis. As the spool rotates, it moves axially along its axis to avoid displacing the cable from the lift axis. A guide pulley positioned below the spool is used to direct the cable between the lift axis and a spool-tangent axis to minimize displacement of the cable as it is raised and rotated.

Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.

Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.

Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible. Since the solid silicon material such as polysilicon is supplied to the main crucible in a state in which the solid silicon material is completely melted outside the main crucible in which the ingot is grown, there is no need to form a partition in the main crucible, and thus the size of the main crucible may be reduced to reduce the manufacturing costs of the apparatus. In addition, since the main crucible is formed as one region, there is an effect of improving the ease of temperature control in the main crucible.

Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible. Since the solid silicon material such as polysilicon is supplied to the main crucible in a state in which the solid silicon material is completely melted outside the main crucible in which the ingot is grown, there is no need to form a partition in the main crucible, and thus the size of the main crucible may be reduced to reduce the manufacturing costs of the apparatus. In addition, since the main crucible is formed as one region, there is an effect of improving the ease of temperature control in the main crucible.

A wavelength conversion device including a cavity that includes an RAMO.sub.4 crystal having a single crystal represented by a first general formula of RAMO.sub.4, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.