The present disclosure relates to a plasma resistant member in which a surface exposed to plasma is formed from a single crystal yttrium⋅aluminum⋅garnet (YAG) having a {100} plane, and a plasma treatment device component and a plasma treatment device using the plasma resistant member. When there are a plurality of surfaces exposed to plasma, at least a surface required to have the highest plasma resistance is formed from the single crystal YAG having a {100} plane.

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

A high resistance gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a high resistance gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted resistivity.

A high resistance gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a high resistance gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted resistivity.

A conductive gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a conductive gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted carrier concentration.

A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.

A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.