The present invention provides a PZN-based large-size ternary high-performance single crystal, a growing method and a molten salt furnace. The PZN-based large-size ternary high-performance single crystal is represented by formula (1-x-y)Pb(B′.sub.1/2B″.sub.1/2)O.sub.3-yPb(Zn.sub.1/3Nb.sub.2/3)O.sub.3-xPbTiO.sub.3, wherein B′ is Mg, Fe, Sc, Ni, In, Yb, Lu and/or Ho, B″ is Nb, Ta and/or W, 0.4<x<0.6, 0.1<y<0.4, 0.1<1-x-y<0.4. The present invention adjusts the convective change of the melt through the rotation of the top seed and the bottom crucible, overcoming the problems of serious crystal inclusions and poor crystal quality during the growth process, and can adapt the change of the crystal diameter to the thermal inertia of the heat preservation system, thus effectively reducing crystal inclusions and improving the yield of the crystal.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.

Provided is a method for producing a SiC single crystal wherein a 4H—SiC single crystal is grown by minimizing generation of polytypes other than 4H. A method for producing a SiC single crystal by a solution process, wherein a seed crystal is 4H—SiC, and a (000-1) face of the seed crystal is a growth surface, wherein the method includes: setting a temperature at a center section of a region of a surface of a Si—C solution where the growth surface of the seed crystal contacts to 1900° C. or higher, and limiting a ΔTc/ΔTa to 1.7 or greater, wherein the ΔTc/ΔTa is a ratio of a temperature gradient ΔTc between the center section and a location 10 mm below the center section in the vertical direction, with respect to a temperature gradient ΔTa between the center section and a location 10 mm from the center section in the horizontal direction.

An object of the present invention is to provide a SIC single crystal production apparatus that stirs and heats a Si—C solution easily. The apparatus includes a crucible capable of containing a Si—C solution, a seed shaft, and an induction heater. The crucible includes a tubular portion and a bottom portion. The tubular portion includes an outer peripheral surface and an inner peripheral surface. The bottom portion is disposed at a lower end of the tubular portion. The bottom portion defines an inner bottom surface of the crucible. The outer peripheral surface includes a groove extending in a direction crossing the circumferential direction of the tubular portion.

An object of the present invention is to provide a SIC single crystal production apparatus that stirs and heats a Si—C solution easily. The apparatus includes a crucible capable of containing a Si—C solution, a seed shaft, and an induction heater. The crucible includes a tubular portion and a bottom portion. The tubular portion includes an outer peripheral surface and an inner peripheral surface. The bottom portion is disposed at a lower end of the tubular portion. The bottom portion defines an inner bottom surface of the crucible. The outer peripheral surface includes a groove extending in a direction crossing the circumferential direction of the tubular portion.