The present application provides a method for manufacturing a monocrystalline silicon sheet, including: cutting a monocrystalline silicon rod along a radial or an axial direction of the monocrystalline silicon rod to obtain a monocrystalline silicon substrate; etching a porous silicon structure on a top surface and a bottom surface of the monocrystalline silicon substrate by wet etching; depositing a monocrystalline silicon thin layer on the porous silicon structure by chemical vapor deposition, so that a thickness of the monocrystalline silicon thin layer reaches a predetermined value; and striping the monocrystalline silicon thin layer from the porous silicon structure to obtain the monocrystalline silicon sheet. In the present application, the production capacity of directly manufacturing a single crystal silicon wafer by a chemical vapor deposition method can be improved, and a process for manufacturing a silicon wafer is combined with the process of a diffusion emitter conventionally belonging to cell manufacturing, so that a manufacturing cost of a solar monocrystalline silicon cell is significantly reduced.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.

A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.

An epitaxial wafer including: a silicon-based substrate; a first buffer layer on the substrate and including a first multilayer structure buffer region composed of Al.sub.xGa.sub.1-xN layers and Al.sub.yGa.sub.1-yN layers (x>y) alternately disposed and a first insertion layer composed of an Al.sub.zGa.sub.1-zN layer (x>z) and is thicker than the Al.sub.yGa.sub.1-yN layer, the first regions and insertion layers alternately disposed; a second buffer layer on the first and including a second multilayer structure buffer region composed of Al.sub.αGa.sub.1-αN layers and Al.sub.βGa.sub.1-βN layers (α>β) alternately disposed and a second insertion layer composed of an Al.sub.γGa.sub.1-γN layer (α>γ) and is thicker than the Al.sub.βGa.sub.1-βN layer, the second regions and insertion layers alternately disposed; and a channel layer on the second buffer layer and thicker than the second insertion layer. The average Al composition in the second buffer layer is higher than that in the first.

An epitaxial wafer including: a silicon-based substrate; a first buffer layer on the substrate and including a first multilayer structure buffer region composed of Al.sub.xGa.sub.1-xN layers and Al.sub.yGa.sub.1-yN layers (x>y) alternately disposed and a first insertion layer composed of an Al.sub.zGa.sub.1-zN layer (x>z) and is thicker than the Al.sub.yGa.sub.1-yN layer, the first regions and insertion layers alternately disposed; a second buffer layer on the first and including a second multilayer structure buffer region composed of Al.sub.αGa.sub.1-αN layers and Al.sub.βGa.sub.1-βN layers (α>β) alternately disposed and a second insertion layer composed of an Al.sub.γGa.sub.1-γN layer (α>γ) and is thicker than the Al.sub.βGa.sub.1-βN layer, the second regions and insertion layers alternately disposed; and a channel layer on the second buffer layer and thicker than the second insertion layer. The average Al composition in the second buffer layer is higher than that in the first.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Embodiments relate to a layered material (having a substrate, at least a buffer layer, with zero or more growth layers) that has been intercalated via a process that decouples (physically and electronically) the buffer layer from the substrate, thereby resulting in the creation of few-atom thick metal layers that exhibit a range of optical properties, including plasmonic or electronic resonance, that enables superior optical (e.g. Raman) detection of molecules.