Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300° C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300° C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

Provided is a Mg.sub.2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg.sub.2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.

A film forming method of forming a titanium silicide film in a contact forming region of a substrate includes: preparing the substrate having the contact forming region; and forming the titanium silicide film in the contact forming region of the substrate by atomic layer deposition (ALD) by sequentially supplying TiI.sub.4 gas as a Ti precursor and a Si-containing gas as a reducing gas to the substrate.

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Provided are novel transition metal dichalcogenides having a platelet structure and comprising a 2H phase region and/or a 3R phase region. The platelets exhibit a narrow size distribution and comparatively high surface area and edge area, which characteristics render the platelets especially suitable for catalysis applications, as well as use in electronic devices. Also provided are methods of synthesizing the disclosed transition metal dichalcogenide platelets.

The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene.

The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene.

Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.