An integrated circuit comprises a first circuit element operably connected to a second circuit element by a nanowire interconnect; wherein the nanowire interconnect comprises molybdenum phosphide (MoP), tungsten phosphide (WP.sub.2), or niobium phosphide (NbP). A nanowire interconnect can be made by providing a template nanowire; providing a phosphine source; producing phosphine from the phosphine source; and contacting the template nanowire with the phosphine. The nanowire interconnect demonstrates low resistance.

An integrated circuit comprises a first circuit element operably connected to a second circuit element by a nanowire interconnect; wherein the nanowire interconnect comprises molybdenum phosphide (MoP), tungsten phosphide (WP.sub.2), or niobium phosphide (NbP). A nanowire interconnect can be made by providing a template nanowire; providing a phosphine source; producing phosphine from the phosphine source; and contacting the template nanowire with the phosphine. The nanowire interconnect demonstrates low resistance.

A pyramidal growth method for long-seed KDP-type crystal. In the growth method provided by the present invention, the lower end of the long-seed crystal is restricted by a lower tray, and the upper end is free to grow into a pyramidal. At the same time, the four prismatic faces at two directions of [100] and [010] can grow, avoiding growth stress problem during crystal growth, and all cut optical elements have high optical quality. Because the growth process is that four prismatic faces with highly similar growth environments grow at the same time and stirring is applied by blade-like stirring paddles during the crystal growth process, the cut optical elements have high optical uniformity.

A pyramidal growth method for long-seed KDP-type crystal. In the growth method provided by the present invention, the lower end of the long-seed crystal is restricted by a lower tray, and the upper end is free to grow into a pyramidal. At the same time, the four prismatic faces at two directions of [100] and [010] can grow, avoiding growth stress problem during crystal growth, and all cut optical elements have high optical quality. Because the growth process is that four prismatic faces with highly similar growth environments grow at the same time and stirring is applied by blade-like stirring paddles during the crystal growth process, the cut optical elements have high optical uniformity.

A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

Synthesis of the silicoaluminophosphate and metal silicoaluminophosphate polymorphs of the molecular sieve SAPO-18 using cyclic quaternary ammoniums as organic structure-directing agents (OSDA) and use thereof as a catalyst.

Synthesis of the silicoaluminophosphate and metal silicoaluminophosphate polymorphs of the molecular sieve SAPO-18 using cyclic quaternary ammoniums as organic structure-directing agents (OSDA) and use thereof as a catalyst.