Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

A method for synthesizing an intergrown twin Ni.sub.2Mo.sub.6S.sub.6O.sub.2/MoS.sub.2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni-Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is grown, taking a single crystal MoS.sub.2 as a growth template, with the single crystal MoS.sub.2 alternately along a crystal plane (110) of the single crystal MoS.sub.2, so as to form a twin Ni.sub.2Mo.sub.6S.sub.6O.sub.2/MoS.sub.2 two-dimensional nanosheet in which Ni.sub.2Mo.sub.6S.sub.6O.sub.2and MoS.sub.2 are intergrown.

A method for synthesizing an intergrown twin Ni.sub.2Mo.sub.6S.sub.6O.sub.2/MoS.sub.2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni-Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni.sub.2Mo.sub.6S.sub.6O.sub.2 is grown, taking a single crystal MoS.sub.2 as a growth template, with the single crystal MoS.sub.2 alternately along a crystal plane (110) of the single crystal MoS.sub.2, so as to form a twin Ni.sub.2Mo.sub.6S.sub.6O.sub.2/MoS.sub.2 two-dimensional nanosheet in which Ni.sub.2Mo.sub.6S.sub.6O.sub.2and MoS.sub.2 are intergrown.

Disclosed is a method for synthesizing single crystalline molybdenum disulfide via a hydrothermal process that minimizes or eliminates carbon byproducts. The method involves providing two components, including a source of molybdenum and a mineralizer solution, to an inert reaction vessel, heating one zone sufficiently to dissolve the source of molybdenum in the mineralizer solution, and heating a second zone to a lower temperature to allow thermal transport to drive the dissolved material to the second zone, and then precipitate MoS.sub.2 on a seed crystal.

This disclosure relates to methods of growing crystalline layers on amorphous substrates by way of an ultra-thin seed layer, methods for preparing the seed layer, and compositions comprising both. In an aspect of the invention, the crystalline layers can be thin films. In a preferred embodiment, these thin films can be free-standing.

The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.