Method for determining the temperature of products transported on the conveyor belt of a cryogenic tunnel, comprising the following steps: —continuously measuring the surface temperature of products travelling on the conveyor belt; —measuring the thickness of a product at the point where the temperature measurement is taken; —performing the following evaluation: a. when the thickness of the product is within a certain range, then the temperature measured for said product is considered to be a reliable value; b. when the thickness of the product is outside the range, then the last temperature value of the measured product is considered to be a reliable value according to paragraph a) above; c. after a determined period of time during which the measured thickness is outside the range, it is concluded that there are no products on the conveyor belt and the temperature measurements are no longer taken into account.

Method for determining the temperature of products transported on the conveyor belt of a cryogenic tunnel, comprising the following steps: —continuously measuring the surface temperature of products travelling on the conveyor belt; —measuring the thickness of a product at the point where the temperature measurement is taken; —performing the following evaluation: a. when the thickness of the product is within a certain range, then the temperature measured for said product is considered to be a reliable value; b. when the thickness of the product is outside the range, then the last temperature value of the measured product is considered to be a reliable value according to paragraph a) above; c. after a determined period of time during which the measured thickness is outside the range, it is concluded that there are no products on the conveyor belt and the temperature measurements are no longer taken into account.

A method comprises the steps of: (a) Obtaining a measured X-ray spectrum for the coated sample, for determining characteristics for the sample and for a coating material; (b) Determining a simulated X-ray spectrum for the sample based on an initial sample composition; (c) Determining an adapted sample composition that improves a match between the characteristics of the sample and an adapted simulated X ray spectrum; (d) Determining an adapted coating thickness for the coating material based on the adapted sample composition and characteristics of the coating; and (e) Repeating the steps (b) to (d) using the adapted sample composition and the adapted coating thickness of the coating material instead of the initial values, wherein the coating thickness is used for determining an absorption of X-rays.

Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

A method for measuring a thickness of a deposit layer on a metal or alloy substrate using an X-ray fluorescence (XRF) spectrometer, where the deposit layer includes scale deposits or corrosion products. As part of the method, an elemental composition of the deposit layer or the metal or alloy substrate is measured using the XRF spectrometer. The thickness of the deposit layer is obtained from the elemental composition using a calibration relationship between deposit layer thicknesses and corresponding elemental compositions of the deposit layer or the metal/alloy substrate. The method can be applied to determine the rate of deposit layer formation and evaluate the effectiveness of a treatment.

A method for measuring a thickness of a deposit layer on a metal or alloy substrate using an X-ray fluorescence (XRF) spectrometer, where the deposit layer includes scale deposits or corrosion products. As part of the method, an elemental composition of the deposit layer or the metal or alloy substrate is measured using the XRF spectrometer. The thickness of the deposit layer is obtained from the elemental composition using a calibration relationship between deposit layer thicknesses and corresponding elemental compositions of the deposit layer or the metal/alloy substrate. The method can be applied to determine the rate of deposit layer formation and evaluate the effectiveness of a treatment.

A system is provided. The system includes a conveyor apparatus configured for conveying a material and a water content measurement system positioned about the conveyor apparatus for determining water content in the material. A dimension characteristic measurement system for detecting one or more dimension characteristics of the material is provided and a computer device is configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material.