A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

A light receiver designed to determine a position or orientation relative to a reference light wherein the light receiver comprises an elongated rod-shaped light receptor with two ends, a light coupler, a light guide, and light detection means at both ends and a signal processor to process the electric signals of the detection means and to determine the relative position and/or orientation by a comparative evaluation of the electric signals. The light guide serves as a light propagation path of defined length for light coupled into the light guide by the light coupler and the signal processor determines the position and/or orientation based on light propagation speed of the reference light propagating in the light guide.

A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

Provided is an optical filter including a cladding layer, a plurality of metal patterns configured to form a periodic lattice structure on the cladding layer; and an optical waveguide layer on the plurality of metal patterns. Light travels from the optical waveguide layer to the cladding layer. Provided is an optical device using the optical filter.

A light receiver designed to determine a position or orientation relative to a reference light wherein the light receiver comprises an elongated rod-shaped light receptor with two ends, a light coupler, a light guide, and light detection means at both ends and a signal processor to process the electric signals of the detection means and to determine the relative position and/or orientation by a comparative evaluation of the electric signals. The light guide serves as a light propagation path of defined length for light coupled into the light guide by the light coupler and the signal processor determines the position and/or orientation based on light propagation speed of the reference light propagating in the light guide.

A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.