The disclosure relates to a quantum detector configured to receive a microwave signal from a microwave source. The quantum detector comprises a main element formed by a main Josephson junction and a Josephson transmission line which is coupled to the main element for outputting a measurement signal. The Josephson transmission line comprises at least a first set of JTL elements and a second set of JTL elements. The capacitively shunted Josephson junction in each JTL element in the first set is weakly damped, and the JTL element in the second set are more strongly damped than the JTL elements in the first set.

An optical energy detector and a method for detecting a broad range of optical energy are disclosed. The detector comprising a superconducting nanowire filament on a substrate, an electrical current pulse source, a laser pulse source, a first pickup probe, and a second pickup probe for measuring the voltage across the filament. The filament is maintained below a supercomputing critical temperature. The filament is biased with an electrical current pulses slight below the critical current of the filament which creates nonequilibrium state. The filament is excited by the laser pulses, and as a result, a voltage appears after a delay time. The voltage is measured for determining the amount of the optical energy. A reference curve of the voltage and the corresponding delay time can be used for calibrating any light source.

A fiber optical superconducting nanowire detector with increased detector efficiency, fabricated directly on the tip of the input optical fiber. The fabrication on the tip of the fiber allows precise alignment of the detector to the fiber core, where the field mode is maximal. This construction maximizes the coupling efficiency to close to unity, without the need for complex alignment procedures, such as the need to align the input fiber with a previously fabricated device. The device includes a high-Q optical cavity, such that any photon entering the device will be reflected to and fro within the cavity numerous times, thereby increasing its chances of absorption by the nanowire structure. This is achieved by using dedicated cavity mirrors with very high reflectivity, with the meander nanowire structure contained within the cavity between the end mirrors, such that photons impinge on the nanowire structure with every traverse of the cavity.

A device for single-photon detection comprising two superconducting detectors, a bias-current source, a filter element and a readout circuit. Each detector forms a detection area for absorption of incident photons and is connected in parallel; each detector being maintained below its critical temperature and provided with an electrical bias current situated close to and below its critical current so as to be maintained in a non-resistive superconducting state, and configured to transition, at photon absorption, from the non-resistive state to a resistive state due to an increase in current density within the detector above the critical current. The readout circuit senses a voltage change corresponding to the, allowing creation of an event signal for each absorption of an incident photon by a detector. The device includes a current-redistribution portion for redistributing current arising after absorption of incident photons so as to avoid increases in current density above the critical current.

The present invention relates to a phononic-isolated Kinetic Inductance Detector (KID) and a method of fabrication thereof. The KID is a highly sensitive superconducting cryogenic detector which can be scaled to very large format arrays. The fabrication process of the KID of the present invention integrates a phononic crystal into a KID architecture. The phononic structures are designed to reduce the loss of recombination and athermal phonons, resulting in lower noise and higher sensitivity detectors.

An electromagnetic sensor for use in a variety of applications requiring extremely high sensitivity, such as measuring power and characteristics of incident electromagnetic radiation includes a superconducting layer that carries an exchange field for providing a spin splitting effect of charge carriers in the superconducting layer, a metal electrode, and an insulating layer arranged between the superconducting layer and metal electrode to form a spin filter junction therebetween. The electromagnetic sensor provides an antenna including a wave collecting element, in contact with the superconducting layer to convey thereinto external electromagnetic waves that are generated by an external source. An electric measurement device provides an output signal responsive to the amplitude and frequency of the external electromagnetic waves, and contacts the metal electrode to measure an electric current or voltage caused by the spin splitted charge carrier flow from the superconducting layer through the spin filter junction into the metal electrode.

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO.sub.3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

A detector of microwave radiation includes a signal input and a detector output. An absorber element of ohmic conductivity is coupled to said signal input through a first length of superconductor. A variable impedance element, the impedance of which is configured to change as a function of temperature, is coupled to the detector output through a second length of superconductor. The detector also includes a heating input and a heating element coupled to the heating input through a third length of superconductor. The absorber element, the variable impedance element, and the heating element are coupled to each other through superconductor sections of lengths shorter than any of said first, second, and third lengths of superconductor.

A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

A heat transfer device and method are disclosed. The device includes a working region (i.e., working substance) made from a first superconducting material having a superconducting state and a normal state when magnetized. The first superconducting material has a first energy gap while in the superconducting state. A substrate (i.e., cold reservoir) is connected to the working region at a first tunnel junction. The substrate may be a metallic substrate. A heat sink (i.e., hot reservoir) is connected to the working region at a second tunnel junction. The heat sink is made from a second superconducting material having a second energy gap that is larger than the first energy gap. In a particular example, the heat transfer device includes a metallic substrate is made from Copper, a working region made from Tantalum, a heat sink made from Niobium, and the first and second tunnel junctions are made from Tantalum Oxide.