The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.

A method, apparatus and system for measuring a temperature can involve measuring a voltage with a resistance temperature detector using a variable excitation current, and deriving a process temperature from the voltage measured by the resistance temperature detector. The process temperature can be further derived by applying a plurality of values of the variable excitation current, measuring corresponding values of voltage, and estimating a resistance by applying a least square estimation. The process temperature can also be derived by applying a different value of the variable excitation current at every iteration, using a recursive least square estimation to measure a resistance, and using confidence intervals for instrument diagnostics.

A method, apparatus and system for measuring a temperature can involve measuring a voltage with a resistance temperature detector using a variable excitation current, and deriving a process temperature from the voltage measured by the resistance temperature detector. The process temperature can be further derived by applying a plurality of values of the variable excitation current, measuring corresponding values of voltage, and estimating a resistance by applying a least square estimation. The process temperature can also be derived by applying a different value of the variable excitation current at every iteration, using a recursive least square estimation to measure a resistance, and using confidence intervals for instrument diagnostics.

A temperature sensor assembly for measuring a gas temperature in a gas flow stream includes a first substrate having a first surface configured to be connected to a thermally conductive structure in a gas path, a first temperature sensor mounted to the first substrate a first distance from the first surface, and a second temperature sensor mounted to the first substrate a second distance from the first surface. The second distance is less than the first distance. The first and second temperature sensors are arranged along a temperature gradient.

A food thermometer includes a resistance thermometer with an electrical conductor and at least three measuring points for the electrical conductor.

A food thermometer includes a resistance thermometer with an electrical conductor and at least three measuring points for the electrical conductor.

A power device includes a semiconductor substrate having first and second current carrying terminals on respective first and second opposing surfaces thereof. A silicided polysilicon temperature sensor and silicided polysilicon gate electrode are provided on the first surface. A source region of first conductivity type and a shielding region of second conductivity type are provided in the semiconductor substrate. The shielding region forms a P-N rectifying junction with the source region, and extends between the silicided polysilicon temperature sensor and the second current carrying terminal. A field oxide insulating region is provided, which extends between the shielding region and the silicided polysilicon temperature sensor.

The invention relates to a vertical light-emitting diode chip structure capable of measuring temperature and a temperature measurement calibration method thereof. A semiconductor epitaxial structure and a metal film resistance temperature measurement structure are separately arranged on the upper plane of a transverse high thermal conductivity extension structure. Through the high thermal conductivity characteristic of the transverse high thermal conductivity extension structure, the temperature of an active layer of the semiconductor epitaxial structure can be quickly transferred to the metal film resistance temperature measurement structure. The temperature measurement calibration method comprises: placing a plurality of connected and uncut package support plates into a constant temperature device at the same time to obtain a temperature calibration relation for different package support plates at the same time to reduce the temperature calibration cost in a batch mass production mode.

A unit for high-temperature for uses above 700° C. is provided. The unit includes a housing and an electrical functional element. The functional element has a non-conducting substrate, an electrically conductive element, and at least one connection wire or pad. The functional element has a first section, a second section, and a third section. The first section is within the housing and shielded from a local environment. The second section includes the at least one connection wire or pad and is accessible externally to the housing. The third section is between the first and second sections and is embedded in an electrically insulating material. The insulating material seals off the housing from the functional element. A physical and/or chemical bond at an interface between the insulating material and the functional element.

Embodiments described herein provide a thermal flux apparatus, forming a distributed temperature measurement system and comprising a plurality of temperature probe modules, each temperature probe module comprising a sensing element having an electrical resistance that varies with temperature; a data acquisition module comprising an analog-to-digital converter with an input electrically connectable to the plurality of temperature probe modules; and an electrical network comprising between 6 and 8 wires connecting each temperature probe module with the data acquisition module.