The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.

A conductive film (102) includes: a resin film base (50) having a hard coat layer (6) on one main surface of a resin film (5); an underlying layer (20) on a hard coat layer-formed surface of the resin film base; and a metal thin film (10) on the underlying layer. The underlying layer includes at least one layer of inorganic dielectric thin film. The hard coat layer contains first fine particles having an average primary particle diameter of 10 to 100 nm. In a cross section of the hard coat layer, the proportion of an area occupied by the first fine particles is preferably 10% or more.

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

A sensor module includes a first contact, a second contact, and a sensing element made from an iono-conductive material having a conductivity that varies at least in response to variations in an environmental factor. The sensing element is electrically coupled to the first contact and to the second contact, and a first resistance of the sensing element, measured between the first contact and the second contact, varies in response to the variations in the environmental factor.

An electroconductive film (101) comprises a metal thin-film (10) on a first main surface of a flexible substrate (40) that includes a resin film (5). The thickness of the flexible substrate is 1 mm or less. The absolute value [H.sub.2−H.sub.1] of the difference between the heating dimensional change rate H.sub.1 of the electroconductive film and the heating dimensional change rate H.sub.2 of a film obtained by removing the metal thin-film from the electroconductive film is preferably 0.10% or less. There is a tendency that undulation of a temperature sensor film after patterning of the metal thin-film is further suppressed as the value of [H.sub.2−H.sub.1] decreases.

An electronic device includes: a base substrate including an active region, which includes a sensing region, and a peripheral region adjacent to the active region; an input sensor including a sensing insulating layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, the second sensing electrodes being spaced apart from the first sensing electrodes; and a pressure sensor including a plurality of strain sensing patterns overlapping the sensing region, and strain connection patterns connecting the strain sensing patterns to each other, wherein each of the first sensing electrodes comprises a plurality of first sensing patterns overlapping the active region, each of the second sensing electrodes comprises a plurality of second sensing patterns overlapping the active region and on a same layer as the first sensing patterns, and a plurality of second connection patterns connecting the second sensing patterns.

Provided is an electroconductive film having a metal thin-film on a resin film base; and a temperature sensor film which is obtained by patterning the metal thin-film on the resin film base. An electroconductive film (101) which is used for the production of a temperature sensor film comprises a metal thin-film (10) on one principal surface of a resin film base (50), with a chromium oxide thin-film (21) serving as an underlying layer interposed therebetween. A temperature sensor film is obtained by patterning the metal thin-film so as to form a thermometric resistor part and a lead part that is connected to the thermometric resistor part.

An electronic device includes: a base substrate including an active region, which includes a sensing region, and a peripheral region adjacent to the active region; an input sensor including a sensing insulating layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, the second sensing electrodes being spaced apart from the first sensing electrodes; and a pressure sensor including a plurality of strain sensing patterns overlapping the sensing region, and strain connection patterns connecting the strain sensing patterns to each other, wherein each of the first sensing electrodes comprises a plurality of first sensing patterns overlapping the active region, each of the second sensing electrodes comprises a plurality of second sensing patterns overlapping the active region and on a same layer as the first sensing patterns, and a plurality of second connection patterns connecting the second sensing patterns.

Provided is a temperature sensor film comprising a metal-thin film patterned on a resin film substrate, and having high temperature measurement accuracy. A conductive film (102) that is used for producing a temperature sensor film has a nickel thin film (10) on one principal surface of a resin film substrate (50). It is preferable that the interplanar spacing of nickel (111) plane in the nickel thin-film is less than 0.2040 nm. The temperature sensor film is obtained by patterning the nickel thin film to form a temperature-measuring resistance part and a lead part connected to the temperature-measuring resistance part.

The invention concerns a device (1) for measuring at least one parameter of a motor vehicle, the device (1) comprising at least one reference resistor (R.sub.0) of a predetermined value and at least two measuring branches (K1, K2), each of the two measuring branches comprising at least a first element comprising a resistor (R.sub.0) or a resistive sensor (R.sub.2), capable of being connected to a voltage supply (Vcc), and a second element comprising a resistor or a resistive sensor (R.sub.1, R.sub.3) capable of being connected to earth (M), the first element and the second element being connected together at a mid-point (A, B), the mid-points (A, B) of the at least two measuring branches (K1, K2) being connected together in pairs by a third element comprising a resistor or a resistive sensor (R.sub.4).