A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.

In an integrated circuit device having a microelectromechanical-system (MEMS) resonator and a temperature transducer, a clock signal is generated by sensing resonant mechanical motion of the MEMS resonator and a temperature signal indicative of temperature of the MEMS resonator is generated via the temperature transducer. The clock signal and the temperature signal are output from the integrated circuit device concurrently.

The invention achieves a lower noise of a sense signal of a FET-type hydrogen sensor. For solving the above problem, one aspect of a sensor system of the invention includes a reference device and a sensor device configured using FETs on a substrate, and further, well potentials of the reference device and the sensor device are electrically isolated from each other.

In an integrated circuit device having a microelectromechanical-system (MEMS) resonator and a temperature transducer, a clock signal is generated by sensing resonant mechanical motion of the MEMS resonator and a temperature signal indicative of temperature of the MEMS resonator is generated via the temperature transducer. The clock signal and the temperature signal are output from the integrated circuit device concurrently.

A temperature sensor can include a resistor, a first electrical contact at a first end of the resistor, a second electrical contact at a second end of the resistor, and a resistance measuring device. The resistor can be formed of a matrix of sintered elemental transition metal particles interlocked with a matrix of fused thermoplastic polymer particles. The resistance measuring device can be connected to the first electrical contact and the second electrical contact to measure a resistance of the resistor.

Various examples of methods and systems related to thermistor sensing for measurement of respiration are shown. In one example, a breath sensing system includes a self-heating temperature sensor that can be positioned in respiratory air of a subject and processing circuitry that can monitor operation of the self-heating temperature sensor. Respiratory information associated with physical or physiological properties of the subject can be communicated to a remotely located computing device. Electronic switching circuitry can be included to change operation of the self-heating temperature sensor between a temperature sensing mode and a heated power dissipation sensing mode. The processing circuitry can control switching between the modes. In another example, a method includes monitoring operational conditions of a self-heating temperature sensor positioned in respired air and determining, e.g., breath velocity, breath period, breath volume, breath carbon dioxide level, and heart rate based at least in part upon the operational conditions.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

A temperature measurement device (10) comprises: a thermosensitive unit (41) that senses temperature; a thin film thermosensitive element (1) for measurement capable of measuring the temperature by bringing the thermosensitive unit (41) into contact with a subject; a thin film thermosensitive element (2) for protective heating disposed to enable heat exchange with the thin film thermosensitive element (1) via an insulating layer (S1), and controlled so that the temperature thereof is equal to the temperature of the thin film thermosensitive element (1); a temperature control element (3) capable of causing the thin film thermosensitive element (1) to be in a temperature state in which the temperature thereof is a certain degree lower than the temperature of the subject; and a control processing unit (5) controlling the thin film thermosensitive element (1), the thin film thermosensitive element (2), and the temperature control element (3).

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible.