The temperature sensor module includes: a temperature sensor element and a signal processing circuit. The signal processing circuit includes: a series-connection resistor which is connected in series to the temperature sensor element; a temperature detection circuit which detects a temperature; a first analog-digital conversion circuit which converts an output signal from the temperature detection circuit into a digital signal; a memory which stores a series-connection resistor data piece about a relationship between a temperature and the resistance value of the series-connection resistor; a digital signal processing circuit which uses the series-connection resistor data piece, to calculate, on the basis of the digital signal indicating the temperature of the signal processing circuit, a digital command signal for keeping the resistance value of the series-connection resistor at a constant value, and outputs the digital command signal; and a digital-analog conversion circuit which outputs the digital command signal to the series-connection resistor.

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

The temperature sensor module includes: a temperature sensor element and a signal processing circuit. The signal processing circuit includes: a series-connection resistor which is connected in series to the temperature sensor element; a temperature detection circuit which detects a temperature; a first analog-digital conversion circuit which converts an output signal from the temperature detection circuit into a digital signal; a memory which stores a series-connection resistor data piece about a relationship between a temperature and the resistance value of the series-connection resistor; a digital signal processing circuit which uses the series-connection resistor data piece, to calculate, on the basis of the digital signal indicating the temperature of the signal processing circuit, a digital command signal for keeping the resistance value of the series-connection resistor at a constant value, and outputs the digital command signal; and a digital-analog conversion circuit which outputs the digital command signal to the series-connection resistor.

Provided is an internal temperature measurement device capable of measuring an internal temperature of a measuring object for which the thermal resistance value of a non-heating body present on the surface side of the object is unknown, more accurately with better responsiveness than hitherto. The internal temperature measurement device 10 includes a MEMS chip 12 including: two cells 20a, 20b for measuring two heat fluxes for calculating an internal temperature of a measuring object for which the thermal resistance value of a non-heating body is unknown; and a cell 20c for increasing a difference between the heat fluxes.