A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.

A resonant pressure sensor with improved linearity includes a substrate including a substrate-fixed portion fixed to a housing-fixed portion and a substrate-separated portion separated from the housing-fixed portion in a first direction; a first resonator disposed in the substrate-separated portion to detect a change of a resonance frequency based on a strain caused by static pressure applied by a pressure-receiving fluid interposed in a gap between the housing-fixed portion and the substrate; a first electrode extending along a second direction to output an excitation signal to the first resonator; a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency; and a processor that measures the static pressure based on the detected change.

A sensor unit includes a transducer element monitoring a measurand and generating an electrical output signal correlated with the measurand, a sensor substrate having a first surface and an opposite second surface, a recess extending from the first surface of the substrate through to the second surface of the substrate, and a circuit carrier. The transducer element and a first electrically conductive contact pad are arranged on the first surface and electrically connected. The circuit carrier has a second electrically conductive contact pad. The sensor substrate is mounted on the circuit carrier with the first surface facing the circuit carrier. The first electrically conductive contact pad and the second electrically conductive contact pad are interconnected by an electrically conductive material filled in from the second surface towards the first surface of the sensor substrate.

Provided are a resonator, a method of manufacturing the resonator, and a strain sensor and a sensor array including the resonator. The resonator is provided to extend in a lengthwise direction from a support. The resonator includes a single crystal material and is provided to extend in a crystal orientation that satisfies at least one from among a Young's modulus and a Poisson's ratio, from among crystal orientations of the single crystal material.

A resonant pressure sensor with improved linearity includes: a substrate including a substrate-separated portion separated from a housing-fixed portion; a first resonator that: is disposed in the substrate-separated portion; and detects a change of a first resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a second resonator that: is disposed in the substrate; detects a change of a second resonance frequency based on the strain in the substrate; and has a pressure sensitivity of the second resonance frequency; and a processor that: measures the static pressure based on the detected change of the first resonance frequency; and corrects the static pressure according to internal temperature of the pressure sensor based on a difference between the second resonance frequency and the first resonance frequency.

A resonant pressure sensor includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that comprises: a substrate-fixed portion that is fixed to the housing-fixed portion; and a substrate-separated portion that is separated from the housing-fixed portion in a first direction and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a first electrode that extends along a second direction perpendicular to the first direction and that outputs an excitation signal to the first resonator to excite the first resonator; and a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency.

A sensor is provided having a diaphragm. One side of the diaphragm is arranged to be exposed to a fluid, to measure a characteristic of the fluid. Two supports are mounted on the diaphragm and a resonator is provided on the supports. The proportion of energy transferred from the resonator to the diaphragm is variable for the sensor to be used either as a viscosity/density sensor or as a pressure sensor.

A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1×10.sup.20 (cm.sup.−3) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm. The resonator and the first strain gauge are arranged to form zones of doping that are substantially identical in kind and in concentration.

A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.