A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device is equipped with a sensor substrate; a diaphragm system that is anchored in the sensor substrate and that includes a first diaphragm and a second diaphragm situated spaced apart therefrom, which are circumferentially connected to one another in an edge area and enclose a reference pressure in an interior space formed in between; and a plate-shaped electrode that is suspended in the interior space and that is situated spaced apart from the first diaphragm and from the second diaphragm and forms a first capacitor with the first diaphragm and forms a second capacitor with the second diaphragm. The first diaphragm and the second diaphragm are designed in such a way that they are deformable toward one another when acted on by an external pressure.

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device is equipped with a sensor substrate; a diaphragm system that is anchored in the sensor substrate and that includes a first diaphragm and a second diaphragm situated spaced apart therefrom, which are circumferentially connected to one another in an edge area and enclose a reference pressure in an interior space formed in between; and a plate-shaped electrode that is suspended in the interior space and that is situated spaced apart from the first diaphragm and from the second diaphragm and forms a first capacitor with the first diaphragm and forms a second capacitor with the second diaphragm. The first diaphragm and the second diaphragm are designed in such a way that they are deformable toward one another when acted on by an external pressure.

An inner housing part has through-holes for connecting first lead pins (power supply terminal, output terminal, ground terminal) with the connector pins. The inner housing part has grooves that house second lead pins for adjusting output signals of a sensor chip. Three of the grooves each has a shape in which a distance between opposing sides of the groove is less than a diameter of the second lead pin that corresponds to the groove. The inner housing part is fixed to a case by a thermoset adhesive so as to house lead pins arranged in the case included in a sensor element. The second lead pins are fitted in the grooves, suppressing lifting of the inner housing part during curing of the adhesive.

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.