Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.

Systems and methods for non-contact characterization of semiconductor devices. Systems may include: an infrared radiation source directing radiation towards the semiconductor device; a radiation directing device positioned proximal the infrared radiation source to direct radiation towards an opposing side of the semiconductor device, the semiconductor device receivable between the radiation directing device and the infrared radiation source; and a radiation detector proximal to the infrared radiation source to sense radiation associated with a plurality of infrared wavebands from the semiconductor device for determining a dopant profile property of the semiconductor device. The sensed radiation may include radiation originating from the infrared radiation source reflected from the semiconductor device. The sensed radiation may include radiation originating from the radiation directing device and emerging from the semiconductor device. The dopant profile properties may be based on infrared reflectance or infrared transmittance associated with the plurality of respective infrared wavebands.

Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.

A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.

A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

A method for detecting an internal crack in a wafer includes a first image recording step of applying near infrared light having a transmission wavelength to a reference wafer having the same configuration as a target wafer to be subjected to the detection of the internal crack, thereby obtaining a first image of the reference wafer having no internal crack and then recording the first image, a processing step of processing the target wafer, a second image recording step of applying the near infrared light to the target wafer, thereby obtaining a second image of the processed target wafer and then recording the second image, and an internal crack detecting step of removing the same image information between the first image and the second image from the second image to obtain a residual image, thereby detecting the residual image as the internal crack in the target wafer.

There is disclosed a protected item including an item that needs protection and a protective coating having a hardness of at least about 8 on the Mohs scale. The protected item includes a light transmission in part or all of the visible wavelength of at least about 60% and a light reflection in the visible wavelength of about 4% or less.

A hybrid probe includes a probe body including a wiring and extending in a first direction; and a probe tip coupled to the probe body and including a first antenna, a second antenna, and an isolation layer. The hybrid probe may operate in a reflection mode using the first antenna and the second antenna, and operate in a transmission mode using the second antenna.

A method is described in which a spectrum of a surface of a photoconductor member is obtained using optical spectroscopy; and an extent of oxidation of the surface is determined based on the obtained spectrum.

A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material into an integrating sphere to scatter the received radiation and passing portions of the radiation through band pass filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.