Patent classifications
G01P2015/088
Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element
A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.
Physical quantity sensor, composite sensor, inertial measurement unit, vehicle positioning device, portable electronic device, electronic device, vehicle, traveling supporting system, display device, and manufacturing method for physical quantity sensor
A physical quantity sensor includes a physical quantity sensor element including a lid joined to a substrate to define a housing space in the inside and a physical quantity sensor element piece housed in the housing space and a circuit element bonded to the outer surface of the lid via an adhesive material. In the lid, an electrode is provided to extend from an inner wall of a through-hole, which pierces through the lid from the housing space to a surface on the opposite side of the side of the physical quantity sensor element piece and is sealed by a sealing member, to a peripheral edge of the through-hole at the surface on the opposite side. In a sectional view, thickness of a region at the peripheral edge of the electrode is smaller at the opposite side of the side of an opening of the through-hole than the opening side.
Capacitive physical quantity sensor
A capacitive physical quantity sensor includes a first substrate, a movable electrode, a fixed electrode, and a second substrate. An auxiliary electrode is disposed on a portion of the second substrate to face the movable electrode and the auxiliary electrode has a facing area that faces the movable electrode. The facing area in a case where the movable electrode is displaced in one direction is different from the facing area in a case where the movable electrode is displaced in an opposite direction opposite to the one direction. The physical quantity is detected based on a capacitance, which is generated corresponding to the interval between the fixed electrode and the movable electrode, and a capacitance, which is generated corresponding to an interval between the facing area of the movable electrode and the auxiliary electrode.
Decoupling structure for accelerometer
Accelerometer including a decoupling structure for fixing the accelerometer on a package and a MEMS sensor chip for measuring an acceleration. The chip is supported by the decoupling structure and includes a sensor wafer layer of a semiconductor material. The decoupling structure forms a bottom portion for fixing the decoupling structure on the package and a top portion fixed to the sensor wafer layer so that the chip is arranged above the decoupling structure. A width of the top portion in a planar direction is smaller than a width of the bottom portion and/or the sensor wafer layer in the planar direction. The decoupling structure is made of the same semiconductor material as the sensor wafer layer. The centre point of the top portion is arranged in a central region of the bottom portion. The chip includes a hermetically closed cavity which includes a seismic mass of the chip.
MICRO-ELECTRO MECHANICAL SYSTEM DEVICE CONTAINING A BUMP STOPPER AND METHODS FOR FORMING THE SAME
A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
Micro-electro mechanical system device containing a bump stopper and methods for forming the same
A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
MICRO-ELECTRO MECHANICAL SYSTEM DEVICE CONTAINING A BUMP STOPPER AND METHODS FOR FORMING THE SAME
A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
Electronic Device, Manufacturing Method For Electronic Device, Electronic Apparatus, And Vehicle
An electronic device includes a substrate, a functional element disposed on a principal plane of the substrate, a lid body, the functional element being housed in a space covered by the lid body and the substrate, the lid body including a recess at a side opposed to the functional element, an outer surface at the opposite side of the recess, a first hole section including an inclined surface and a bottom surface on the outer surface, and a second hole section piercing through the lid body between the recess and the bottom surface and having an inner wall surface, a joining section of the inclined surface and the bottom surface in the first hole section being a curved surface, the lid body containing silicon, and a sealing member that seals the first hole section communicating with the space.
MICROMECHANICAL SENSOR AND METHODS FOR PRODUCING A MICROMECHANICAL SENSOR AND A MICROMECHANICAL SENSOR ELEMENT
A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.
Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element
A micromechanical sensor includes a first and a second capacitive sensor element each having a first and a second electrode, wherein electrode wall surfaces of the first electrode and the second electrode are situated opposite one another in a first direction and form a capacitance, wherein the first electrodes are movable in a second direction, which is different than the first direction, in response to a variable to be detected, and the second electrodes are stationary. The electrode wall surface of the first electrode of the first sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the second electrode of the first sensor element. The electrode wall surface of the second electrode of the second sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the first electrode of the second sensor element.