A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

Provided is a probe configured to detect a near field, the probe including a probe substrate having a tip region at an end portion of the probe substrate, a width of the tip region being less than a width of a remaining region of the probe substrate, a first electrode and a second electrode disposed on a surface of the probe substrate, the first electrode and the second electrode being spaced apart from each other and extending from the tip region along the probe substrate, an emitter and a detector disposed between the first electrode and the second electrode, the emitter and the detector being spaced apart from each other in a direction in which the probe substrate extends, and being configured to be photo switched, and a reflector disposed above the emitter and the detector in the direction in which the probe substrate extends opposite to the tip region, and configured to reflect an electromagnetic wave emitted from the emitter.

Provided is a probe configured to detect a near field, the probe including a probe substrate having a tip region at an end portion of the probe substrate, a width of the tip region being less than a width of a remaining region of the probe substrate, a first electrode and a second electrode disposed on a surface of the probe substrate, the first electrode and the second electrode being spaced apart from each other and extending from the tip region along the probe substrate, an emitter and a detector disposed between the first electrode and the second electrode, the emitter and the detector being spaced apart from each other in a direction in which the probe substrate extends, and being configured to be photo switched, and a reflector disposed above the emitter and the detector in the direction in which the probe substrate extends opposite to the tip region, and configured to reflect an electromagnetic wave emitted from the emitter.

This disclosure relates to a method for measuring an electric field in the near-field region of an optically excited sample. The method includes optically exciting at least part of the sample. This step includes directing excitation light onto an interface between the sample and a medium. The excitation light is incident onto the interface under an angle of incidence such that total internal reflection of the excitation light occurs at the interface. The method further includes measuring the electric field using a terahertz near-field probe, wherein the terahertz near-field probe is positioned on one side of the interface and the excitation light approaches the interface on another side of the interface. This disclosure further relates to a system and computer program for measuring an electric field in the near-field region of an optically excited sample.

This disclosure relates to a method for measuring an electric field in the near-field region of an optically excited sample. The method includes optically exciting at least part of the sample. This step includes directing excitation light onto an interface between the sample and a medium. The excitation light is incident onto the interface under an angle of incidence such that total internal reflection of the excitation light occurs at the interface. The method further includes measuring the electric field using a terahertz near-field probe, wherein the terahertz near-field probe is positioned on one side of the interface and the excitation light approaches the interface on another side of the interface. This disclosure further relates to a system and computer program for measuring an electric field in the near-field region of an optically excited sample.

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

An imaging system includes a probe device configured to make displacement measurements of a sample. A mounting stage to support the sample, where at least one of the probe device or mounting stage comprises a rotatory actuator that rotates the one of the probe device or mounting stage. A processing system is coupled to at least one of the probe or the mounting system and comprises a memory coupled to a processor configured to be capable of executing programmed instructions to: initiate the displacement measurements with the probe device; initiate with the rotary actuator a change in a rotational position of the sample for the displacement measurements; determine a lateral position of features of the sample based on the displacement measurements and the different rotational positions; and generate an image of the sample based on the determined lateral position of the features.

An imaging system includes a probe device configured to make displacement measurements of a sample. A mounting stage to support the sample, where at least one of the probe device or mounting stage comprises a rotatory actuator that rotates the one of the probe device or mounting stage. A processing system is coupled to at least one of the probe or the mounting system and comprises a memory coupled to a processor configured to be capable of executing programmed instructions to: initiate the displacement measurements with the probe device; initiate with the rotary actuator a change in a rotational position of the sample for the displacement measurements; determine a lateral position of features of the sample based on the displacement measurements and the different rotational positions; and generate an image of the sample based on the determined lateral position of the features.