A probe system and a machine apparatus thereof are provided. The machine apparatus can be configured for optionally carrying at least one probe assembly. The machine apparatus includes a temperature control carrier module, a machine frame structure and a temperature shielding structure. The temperature control carrier module can be configured for carrying at least one predetermined object. The machine frame structure can be configured for partially covering the temperature control carrier module, and the machine frame structure has a frame opening for exposing the temperature control carrier module. The temperature shielding structure can be disposed on the machine frame structure for partially covering the frame opening, and the temperature shielding structure has a detection opening for exposing the at least one predetermined object. The temperature shielding structure has a gas guiding channel formed thereinside for allowing a predetermined gas in the gas guiding channel.

A waveguide interface is disclosed. The disclosed waveguide interface comprises: an inner boundary region extending peripherally around a cavity, a recessed region extending peripherally around the inner boundary region, and a plurality of protrusions extending from the recessed region.

A verification probe system is configured to verify an automated test platform and includes: an integrated circuit test probe assembly; and a moveable platform configured to position the integrated circuit test probe assembly proximate one of more conductive pins included within a test socket assembly of the automated test platform.

A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.

Vertical transmission line probes having alternating capacitive and inductive sections are provided. These alternating sections can be designed to provide a desired transmission line impedance (e.g., between 10 and 100 Ohms, preferably 50 Ohms). Probe flexure in operation is mainly in the inductive sections, advantageously reducing flexure stresses on the dielectrics in the capacitive sections.

Disclosed is a test device for testing a high-frequency and high-speed semiconductor. The test device includes a probe supporting block formed with a tube accommodating portion along a test direction; a conductive shield tube accommodated in the tube accommodating portion; and a probe accommodated and supported in the shield tube without contact, the tube accommodating portion including a conductive contact portion for transmitting a ground signal to the shield tube. When a high-frequency and high-speed semiconductor or the like subject is tested, the test device easily and inexpensively prevents crosstalk between the adjacent signal probes and improves impedance characteristic.

A test and measurement probe system (100,104), including an input (106) to receive an input signal, the input signal including a low frequency (LF) and/or direct current (DC) component and an alternating current (AC) component, an extractor circuit (110), such as an AC coupling circuit or a LF and/or DC rejection circuit, configured to receive the input signal and to separate the AC component and the LF and/or DC component from the input signal, a first output (118) to output the alternating current component to the test and measurement instrument, and a second output to output the direct current component to the test and measurement instrument. In some embodiments, the LF and/or DC component is digitized prior to being output by the second output.

A hermetically RF-EMI shielded 3-axis and planarity adjustable combo link assembly for low loss connection between the coaxial RF connector of external instruments (impedance tuners) with 30- or 45-degrees wafer probes allows continuous, micro-positioner controlled independent horizontal and vertical probe movement. Flexible sealing O-rings and RF absorbing sheets and gaskets ensure airtight and RF-EMI shielded operation.

An apparatus for probing a device-under-test (DUT) includes a fixture disposed over the DUT, a circuitry film disposed along a contour of the fixture, a first signal connector, and a plurality of probing tips disposed on the circuitry film and extending toward the device-under-test. The circuitry film includes a first portion attached to a top sidewall of the fixture, and the first signal connector is disposed on and electrically connected to the first portion of the circuitry film. The first signal connector is electrically coupled to the probing tips through the circuitry film. A method for probing a DUT is also provided.

A wafer probe-to-waveguide adapter is transformed to a load pull device by integrating in the straight section of the waveguide a two-slug tuner with fixed penetration into diametral slots in the waveguide controlled by linear stepper actuators crossing over and sharing the same section of the waveguide.