A testing apparatus for Devices Under Test (DUTs) includes at least one intake damper and at least one exhaust damper. At least one fan moves recirculated fluid and exterior fluid across one or more DUTs inside the testing apparatus. In one aspect, the testing apparatus includes a door to provide access to a chamber and the door includes at least one channel. At least a portion of the fluid flows through the at least one channel of the door. In another aspect, the door is configured to provide access to a chamber from the front of the chamber and the fluid is moved in a direction across the one or more DUTs substantially from the front of the chamber towards a rear of the chamber.

A testing apparatus for Devices Under Test (DUTs) includes at least one intake damper and at least one exhaust damper. At least one fan moves recirculated fluid and exterior fluid across one or more DUTs inside the testing apparatus. In one aspect, the testing apparatus includes a door to provide access to a chamber and the door includes at least one channel. At least a portion of the fluid flows through the at least one channel of the door. In another aspect, the door is configured to provide access to a chamber from the front of the chamber and the fluid is moved in a direction across the one or more DUTs substantially from the front of the chamber towards a rear of the chamber.

According to a certain embodiment, a pin plunger includes: a first contact member; a second contact member that faces the first contact member and is apart from the first contact member; a spring arranged between the first contact member and the second contact member; and a housing that houses the first contact member, the second contact member, and the spring. The housing comprises a bimetal inside or outside the housing. The bimetal comprises a first metal and a second metal, the first metal having a thermal expansion coefficient different from a thermal expansion coefficient of the second metal. The elastic force decreased or increased by contracting or expanding of the spring due to a temperature change is compensated with a warping force due to stretching of the first metal and the second metal.

A spark detector indicates the presence of a spark by analyzing sound waves generated when an electrical spark is produced from an electrical spark generator located on an igniter rod. The spark detector includes an acoustic sensor that is in communication with the igniter rod to determine the time for the spark sound wave to travel through the igniter rod to the acoustic sensor. If a spark is not detected, the spark detector may output a signal indicating at least one of (i) the spark was not detected, (ii) to replace the electrical spark generator immediately, or (iii) replace the electrical spark generator soon such as at the next scheduled maintenance. Furthermore, the spark detector may be calibrated based on current temperature of the igniter rod based upon time of propagation of a pulse sound wave, generated by a pulse-echo generator, to reflect off an end of the igniter rod.

A spark detector indicates the presence of a spark by analyzing sound waves generated when an electrical spark is produced from an electrical spark generator located on an igniter rod. The spark detector includes an acoustic sensor that is in communication with the igniter rod to determine the time for the spark sound wave to travel through the igniter rod to the acoustic sensor. If a spark is not detected, the spark detector may output a signal indicating at least one of (i) the spark was not detected, (ii) to replace the electrical spark generator immediately, or (iii) replace the electrical spark generator soon such as at the next scheduled maintenance. Furthermore, the spark detector may be calibrated based on current temperature of the igniter rod based upon time of propagation of a pulse sound wave, generated by a pulse-echo generator, to reflect off an end of the igniter rod.

Embodiments of the present disclosure describe semiconductor equipment devices having a metal workpiece and a diamond-like carbon (DLC) coating disposed on a surface of the metal workpiece, thermal semiconductor test pedestals having a metal plate and a DLC coating disposed on a surface of the metal plate, techniques for fabricating thermal semiconductor test pedestals with DLC coatings, and associated configurations. A thermal semiconductor test pedestal may include a metal plate and a DLC coating disposed on a surface of the metal plate. The metal plate may include a metal block formed of a first metal and a metal coating layer formed of a second metal between the metal block and the DLC coating. An adhesion strength promoter layer may be disposed between the metal coating layer and the DLC coating. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure describe semiconductor equipment devices having a metal workpiece and a diamond-like carbon (DLC) coating disposed on a surface of the metal workpiece, thermal semiconductor test pedestals having a metal plate and a DLC coating disposed on a surface of the metal plate, techniques for fabricating thermal semiconductor test pedestals with DLC coatings, and associated configurations. A thermal semiconductor test pedestal may include a metal plate and a DLC coating disposed on a surface of the metal plate. The metal plate may include a metal block formed of a first metal and a metal coating layer formed of a second metal between the metal block and the DLC coating. An adhesion strength promoter layer may be disposed between the metal coating layer and the DLC coating. Other embodiments may be described and/or claimed.

A system for testing circuits of an integrated circuit semiconductor wafer includes a tester system for generating signals for input to the circuits and for processing output signals from the circuits for testing the wafer and a test stack coupled to the tester system. The test stack includes a wafer probe for contacting a first surface of the wafer and for probing individual circuits of the circuits of the wafer, a wafer thermal interposer (TI) layer operable to contact a second surface of the wafer and operable to selectively heat areas of the wafer, and a cold plate disposed under the wafer TI layer and operable to cool the wafer. The system further includes a thermal controller for selectively heating and maintaining temperatures of the areas of the wafer by controlling cooling of the cold plate and by controlling selective heating of the wafer TI layer.

One embodiment provides an analog front-end circuit. When a chopping signal has a first logical value, a non-inverting instrumentation preamplifier subtracts a second input voltage from a first input voltage and generates a first output voltage by amplifying a subtraction voltage while outputting the second input voltage as a second output voltage. When the chopping signal has a second logical value, the non-inverting instrumentation preamplifier subtracts the first input voltage from the second input voltage and generates the first output voltage by amplifying and then inverting the polarity of a subtraction voltage while outputting the second input voltage as the second output voltage.

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor.