A universal switching platform is configured to test a device under test, and includes a first power source, a first switch, a second switch and a second power source. The first switch, the second switch and the second power source are coupled in series between positive and negative terminals of the first power source. The common node of the first and second switches and the negative terminal of the first power source are configured to be respectively coupled to first and second terminals of the device under test. The universal switching platform provides a voltage and a current to test the device under test when the first and second switches are controlled to transition between conduction and non-conduction.

An inspection apparatus is provided to inspect an imaging device formed on an inspection object by bringing a contact terminal into electrical contact with a wiring layer of the imaging device while causing light to enter the imaging device. The light enters the imaging device from a back surface that is a surface on the side opposite to the side on which the wiring layer is formed. The inspection apparatus includes a substrate support made of a light-transmissive material and on which the inspection object is supported such that the substrate support faces a back surface of the imaging device, and a light irradiation mechanism disposed to be opposite to the inspection object with the substrate support interposed therebetween and having a plurality of LEDs such that light from the LEDs is oriented toward the inspection object.

The subject application provides an apparatus and method for measuring dynamic on-resistance of a device under test (DUT) comprising a control terminal electrically connected to an output of a first controlling module being configured to generate a first control signal to switch on and off the DUT. The apparatus comprises a switching device and a second controlling module configured to: receive the first control signal from the first controlling module and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval.

Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.

Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.

A method of diagnosing a load port includes identifying a plurality of entities for a plurality of substrate storage containers by a plurality of load ports capable of transferring a substrate into and out of the plurality of substrate storage containers; detecting directly or indirectly a plurality of states of the plurality of substrate storage containers by a plurality of sensors provided at the plurality of load ports; associating the plurality of load ports, the plurality of entities and a plurality of sensor values, with each other; accumulating, in a database, data associated in the act of associating the plurality of load ports, the plurality of entities, and the plurality of sensor values; and analyzing the data in the database and determining a state of each of the plurality of load ports.

The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.

A sacrificial interposer test structure including a release layer, a dummy layer on the release layer, one or more conductive pads embedded in the dummy layer, wherein each of the one or more conductive pads has an exposed surface, and a tie layer on the dummy layer and on each exposed surface of the one or more conductive pads.

An apparatus includes a resistor and a circuit. The resistor may be fabricated on a die using a semiconductor process. The circuit may be fabricated on the die using the semiconductor process and may be configured to (i) generate a measurement voltage at a node of the resistor as a function of a capacitance value and a frequency of a clock signal and (ii) generate a codeword in response to the measurement voltage. The codeword generally has a plurality of possible values. A particular value of the possible values may verify that the voltage is between a plurality of threshold voltages.

A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage

[00001]$\left(\frac{\mathrm{dV}}{\mathrm{dt}}\right)$

across the switch; a rate of change of current

[00002]$\left(\frac{\mathrm{di}}{\mathrm{dt}}\right)$

through the switch, a charge present on a gate of the switch (Q.sub.G), a peak overshoot voltage (V.sub.PO) across the switch, and a peak overshoot or reverse recovery current (I.sub.RR) through the switch; and estimating the health of the switch based on the measured parameter(s).