A method is described for determining the resistance temperature characteristic of a ceramic glow plug, wherein the glow plug is heated at a specified power, wherein before the heating it is first determined whether the glow plug is an aged glow plug, and then, if the glow plug has not been detected as an aged glow plug, the glow plug is heated at a first specified power and the resistance value thereby achieved is assigned to a temperature that is anticipated to be the final temperature when heating a factory-outlet glow plug at this first power, or if the glow plug has been detected as an aged glow plug, the glow plug is heated at a reduced power which is smaller than the first power, and the resistance value achieved thereby is assigned to the same temperature that is also anticipated when heating a factory-outlet glow plug at the first power.

A test structure and method to detect open circuits due to electromigration or burn-out in test wires and inter-level vias. Electromigration occurs when current flows through circuit wires leading to a circuit interruption within the wire. The test structure is a passive test wire arranged in one of several configurations within the circuit of a computer chip. The dimensions and resistances of test wires can vary according to the test structure configuration. Each test wire is measured for an electrical discontinuity after the computer chip is powered-on. If a wiring interruption is detected, it is concluded that the chip had been powered-on before.

A test structure for an integrated circuit device includes a series inductor, capacitor, resistor (LCR) circuit having one or more inductor elements, with each inductor element having at least one unit comprising a first segment formed in a first metal layer, a second segment connecting the first metal layer to a semiconductor substrate beneath the first metal layer, and a third segment formed in the semiconductor substrate; and a capacitor element connected in series with each inductor element, the capacitor element defined by a transistor gate structure including a gate electrode as a first electrode, a gate dielectric layer, and the semiconductor substrate as a second electrode.

The present disclosure relates to semiconductor structures and, more particularly, to interconnect reliability structures and methods of manufacture. The structure includes: a plurality of resistors; and a voltmeter configured to sense a relative difference in resistance of the plurality of resistors indicative of at least one of a via-depletion and line-depletion.

Described is an apparatus which comprises: a first array of reliability monitors including first and second reliability monitors, wherein the first and second reliability monitors include first and second switches and first and second conductors, wherein the first and second switches are coupled to first and second conductors, respectively; and first and second comparators coupled to the first and second switches, respectively. Described is an apparatus which comprises: a conductor formed on a metal layer; a switch having a source terminal coupled to the conductor, and a drain terminal coupled to a power supply node, wherein the switch is controllable by a controller; and a comparator having a first input coupled to the power supply node and to the switch, wherein the comparator includes a second input coupled to an adjustable reference.

A method detects electromigration in a field replaceable unit. An integrated circuit, which is within a field replaceable unit (FRU) in an electronic device, is quiescented. An isolation power switch applies a test voltage from a field power source to a target voltage rail in the integrated circuit. An isolation power switch isolates the target voltage rail from the field power source. A voltage sensor coupled to the target voltage rail measures a field voltage decay rate for the target voltage rail. A voltage record comparator logic within the integrated circuit compares the field voltage decay rate to an initial voltage decay rate for the target voltage rail. In response to a difference between the field voltage decay rate and the initial voltage decay rate for the target voltage rail exceeding a predetermined limit, a signal is sent to an output device.

Embodiments include methods, and systems of an integrated circuit having electromigration wearout detection circuits. Integrated circuit may include a detection element and a reference element. Detection element is subject to normal operation current. Reference element is not subject to normal operation current. A resistance of detection element is monitored to detect electromigration wearout. The electromigration wearout detection monitoring circuit may be configured to perform: periodically measuring resistance of detection element, calculating resistance change of detection element over a predetermined time period, comparing resistance change of detection element calculated to a predetermined safety threshold, and take mitigation actions when resistance change of detection element exceeds predetermined safety threshold. The mitigation actions may include switching to a redundant circuit of the integrated circuit, shutting down the integrated circuit, and sending a signal to initiate a service call. The predetermined safety threshold may be 1% of resistance change of the detection element.

A die edge crack and delamination detection device includes a semiconductor device including an IC active area surrounded by at least one mechanical protection barrier (MPB); one or more metallization layers stacked on the IC active area; a plurality of passive electronic devices placed within the metallization layers at respective predetermined distances from the MPB; and a detection circuit having circuitry. The circuitry is configured to determine a specific metallization layer in which a crack or a delamination is encroaching from an edge of the semiconductor device, determine a lateral distance of a lead end of the crack or the delamination from the MPB, and determine a rate of approach of the crack or the delamination encroaching towards the MPB, via a nominal change in an electrical measurement of at least one of the passive electronic devices.

A method of estimating a breakdown voltage of a silicon dioxide film includes; generating breakdown voltage information associated with first test dies selected from among test dies, generating a breakdown voltage estimation model by updating a parameter of a neural network model based on the breakdown voltage information, applying test voltages to second test die selected from among the test dies and distinct from the first dies and receiving currents levels for current generated by the second test dies in response to the test voltages, wherein the test voltages have respective levels lower than levels of breakdown voltages for the first test dies, and estimating breakdown voltages of the second test dies using the breakdown voltage estimation model in relation to the currents levels.

Systems and methods are disclosed for IC fabrication by specifying a process monitor with one or more functional blocks including process monitoring structures and wafer identification and die location data on the wafer; fabricating the functional blocks embedded in the wafer at one or more die locations; capturing functional test measurements during or after fabricating the functional blocks; and predicting device failures based on information of known device failures or related process parameters and their relationship to functional test measurements.