A method can be used for testing a charge-retention circuit for measurement of a time interval having a storage capacitor coupled between a first biasing terminal and a floating node, and a discharge element coupled between the floating node and a reference terminal. The discharge element is configured to implement discharge of a charge stored in the storage capacitor by leakage through a corresponding dielectric. The method includes biasing the floating node at a reading voltage, detecting a biasing value of the reading voltage, implementing an operation of integration of the discharge current in the discharge element with the reading voltage kept constant at the biasing value, and determining an effective resistance value of the discharge element as a function of the operation of integration.

A device of measuring a duty cycle includes a resistor-capacitor circuit and a control circuit. The resistor-capacitor circuit is used to generate a first voltage when a reference signal is in a first state, and generate a second voltage and a third voltage when the reference signal is in a second state. The control circuit is coupled to the resistor-capacitor circuit, and configured to acquire an ON-time according to the first voltage, the second voltage and the third voltage. The ON-time is a time interval during which the reference signal is in the first state.

A system and method for the predictive maintenance of electronic components that includes sensors at at least one position via which present values of system parameters, such as temperature and voltage, and a signal propagation time at the at least one position are determined, where values of the system parameters and the signal propagation time presently determined by the sensors are retrieved by a central monitoring unit, an individual valid limit value is determined for the signal propagation time at each of the at least one position via the central monitoring unit based on the presently determined values of the system parameters, and the presently determined signal propagation time at each of the at least one position is compared with the associated valid limit value, and a notification is sent to a superordinate level, if the signal propagation time exceeds the limit value to trigger replacement of the electronic component.

Examples disclosed herein relate to a on-chip or built-in self-test (BIST) module for an RFIC including means to up-convert a signal from a test frequency to RF at an input to the RFIC and down-convert and output signal.

The present disclosure provides a process corner detection circuit and a process corner detection method. The process corner detection circuit includes: M ring oscillators disposed inside a chip, M≥1, where types of N-type transistors in the M ring oscillators are not exactly the same, and types of P-type transistors in the M ring oscillators are not exactly the same; transistor types of the M ring oscillators include all transistor types used in the chip; the ring oscillators include symmetric ring oscillators and asymmetric ring oscillators; types of N-type transistors and P-type transistors in the symmetric ring oscillators are the same; and types of N-type transistors and P-type transistors in the asymmetric ring oscillators are different.

Provided are methods and systems for testing time parameters of an adaptor and systems. The method includes the following. After a testing system is coupled with an adaptor, a clock signal is received from the adaptor, where the clock signal is indicative of the transmission time of the instruction. A first valid interrupt of the clock signal, a square wave corresponding to the first valid interrupt, and a next valid interrupt of the first valid interrupt are acquired. A first falling edge and a first rising edge of the first valid interrupt, a second falling edge of the square wave, and a third falling edge of the next valid interrupt are acquired. A test result time parameters of the adaptor is generated according to the first falling edge, the first rising edge, the second falling edge, and the third falling edge.

A TSV detecting circuit, TSV detecting methods, and an integrated circuit thereof are disclosed by the present disclosure. The TSV detecting circuit includes a first detecting module includes: a first comparison unit; a first input unit, for transmitting an input signal to a first input of the first comparison unit controlled by a first clock signal; a first switching unit for transmitting a signal of a first node to a second input of the first comparison unit controlled by a first detection control signal, the first node coupled to a first terminal of the TSV; and a second detecting module includes: a second input unit for transmitting the input signal to a second node controlled by a second clock signal; a second switching unit for transmitting a signal of the second node to a second terminal of the TSV controlled a second detection control signal.

An integrated circuit die includes a core fabric configurable to include an aging measurement circuit and a device manager coupled to the core fabric to operate the aging measurement circuit for a select period of time. The aging measurement circuit includes a counter to count transitions of a signal propagating through the aging measurement circuit during the select period of time when the aging measurement circuit is operating. The transitions of the signal counted by the counter during the select period of time are a measure of an aging characteristic of the integrated circuit die.

The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.

A method includes mapping an aging measurement circuit (AMC) into the core fabric of an FPGA and operating the AMC for a select time period. During the select period of time, the AMC counts transition of a signal propagating through the AMC. Timing information based on the counted transitions is stored in a timing model in a memory. The timing information represents an aging characteristic of the core fabric at a time that the AMC is operated. An EDA toolchain uses the timing information in the timing model to generate a timing guard-band for the configurable IC die. The AMC is removed from the core fabric and another circuit device is mapped and fitted into the core fabric using the generated timing guard-band models. The circuit device is operated in the configurable IC die based on the timing guard-band models.