An optical probe includes a core part and a clad part arranged along an outer circumference of the core part, and has an incident surface having a radius of curvature R through which an optical signal enters. The radius of curvature R and a central half angle ω at an incident point of the optical signal on the incident surface fulfil the following formulae using a radiation angle γ of the optical signal, an effective incident radius Se of the optical signal transmitted in the core part without penetrating into the clad part on the incident surface, a refractive index n(r) of the core part at the incident point, and a refracting angle β at the incident point:

R=Se/sin(ω)

ω=±sin.sup.−1{[K2.sup.2/(K1.sup.2+K2.sup.2)].sup.1/2}

where K1=n(r)×cos(β)−cos(γ/2) and K2=n(r)×sin(β)−sin(γ/2).

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber 3, a sample table 4 which is disposed in the vacuum chamber and on which a sample 6 is placed, an electron optical system 1 disposed such that an electron beam is emitted from above the sample, a plurality of probe units 24 connected to external devices 11 and 12 disposed outside the vacuum chamber via a coaxial cable 10, and an electrode 5 provided on or in the vicinity of the sample table. The probe unit 24 includes a measurement probe 8 configured to come into contact with the sample, a GND terminal 9 configured to come into contact with the electrode 5, and a probe holder 7 configured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber 3, a sample table 4 which is disposed in the vacuum chamber and on which a sample 6 is placed, an electron optical system 1 disposed such that an electron beam is emitted from above the sample, a plurality of probe units 24 connected to external devices 11 and 12 disposed outside the vacuum chamber via a coaxial cable 10, and an electrode 5 provided on or in the vicinity of the sample table. The probe unit 24 includes a measurement probe 8 configured to come into contact with the sample, a GND terminal 9 configured to come into contact with the electrode 5, and a probe holder 7 configured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

A system for monitoring and identifying states of a semiconductor device, the system including at least one acoustic sensor for sensing acoustic emission emitted by at least one semiconductor device operating at a voltage of less than or equal to 220 V, the at least one acoustic sensor outputting at least one acoustic emission signal and a signal processing unit for receiving the at least one acoustic emission signal from the at least one acoustic sensor and for analyzing the at least one acoustic emission signal, the signal processing unit providing an output based on the analyzing, the output being indicative at least of whether the at least one semiconductor device is in an abnormal operating state with respect to a normal operating state of the semiconductor device.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

A system for monitoring and identifying states of a semiconductor device, the system including at least one acoustic sensor for sensing acoustic emission emitted by at least one semiconductor device operating at a voltage of less than or equal to 220 V. the at least one acoustic sensor outputting at least one acoustic emission signal and a signal processing unit for receiving the at least one acoustic emission signal from the at least one acoustic sensor and for analyzing the at least one acoustic emission signal, the signal processing unit providing an output based on the analyzing, the output being indicative at least of whether the at least one semiconductor device is in an abnormal operating state with respect to a normal operating state of the semiconductor device.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.