A system for testing a circuit comprises scan chains, a controller configured to generate a bit-inverting signal based on child test pattern information, and bit-inverting circuitry coupled to the controller and configured to invert bits of a parent test pattern associated with a plurality of shift clock cycles based on the bit-inverting signal to generate a child test pattern during a shift operation. Here, the plurality of shift clock cycles for bit inverting occur every m shift clock cycles, and the child test pattern information comprises information of m and location of the plurality of shift clock cycles in the shift operation.

A circuit includes a test circuit in an integrated circuit to test signal timing of a logic circuit under test in the integrated circuit. The signal timing includes timing measurements to determine if an output of the logic circuit under test changes state in response to a clock signal. The test circuit includes a bit register that specifies which bits of the logic circuit under test are to be tested in response to the clock signal. A configuration register specifies a selected clock source setting from multiple clock source settings corresponding to a signal speed. The selected clock source is employed to perform the timing measurements of the specified bits of the bit register.

The present invention provides a glitch detector including a first inverter, a second inverter, a first capacitor and a second capacitor. The first inverter is connected between a supply voltage and a ground voltage, and is configured to receive a first signal at a first node to generate a second signal to a second node. The second inverter is connected between the supply voltage and the ground voltage, and is configured to receive the second signal at the second node to generate the first signal to the first node. A first electrode of the first capacitor is coupled to the supply voltage, and a second electrode of the first capacitor is coupled to the first node. A first electrode of the second capacitor is coupled to the ground voltage, and a second electrode of the second capacitor is coupled to the second node.

A test circuit for testing a monitoring circuit includes: a ramp generator configured to generate a ramp signal in response to an activated first control signal; a counter configured to count pulses of a clock signal in response to the activated first control signal; at least one register configured to store an output value of the counter based on a change in at least one output signal generated by the monitoring circuit in response to the ramp signal in a test mode; and a controller configured to generate the first control signal and verify the monitoring circuit based on a ratio of a value stored in the at least one register to a duration during which the first control signal is activated.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.

A method includes identifying state holding pipeline stages in a pipeline path of a design for test (DFT) of an integrated circuit design, splitting each pattern of a plurality of patterns into a first part and a second part, reformatting the plurality of patterns to generate another plurality of patterns such that the first part and the second part of each pattern of the plurality patterns are included in different patterns of the another plurality of patterns. The length of the first part is a function of a number of the identified pipeline stages.

A non-transitory computer-readable recording medium stores an analysis program for causing a computer to execute a process including: reading circuit data; trying to generate test data for a delay fault to be targeted; analyzing whether an underkill is caused when the targeted delay fault results in a redundant fault; and presenting circuit modification locations to avoid the underkill, based on an analysis result, when the underkill is caused.

A self-test system for PCIe and a method thereof are disclosed. In the system, a first circuit interconnect card and a second circuit interconnect card are inserted into CEM slots, respectively, and the first circuit interconnect card and the second circuit interconnect card are electrically connected to each other through a FFC, the central processing unit generates and provides differential signals to the first circuit interconnect card and the second circuit interconnect card; the first circuit interconnect card or the second circuit interconnect card provide differential signals to the second circuit interconnect card or the first circuit interconnect card through the first FFC interface and the second FFC interface, respectively, and the second circuit interconnect card or the first circuit interconnect card provides the differential signals to a central processing unit, so as to implement self-check for PCIe.

To provide more test data during the manufacture of non-volatile memories and other integrated circuits, machine learning is used to generate virtual test values. Virtual test results are interpolated for one set of tests for devices on which the test is not performed based on correlations with other sets of tests. In one example, machine learning determines a correlation study between bad block values determined at die sort and photo-limited yield (PLY) values determined inline during processing. The correlation can be applied to interpolate virtual inline PLY data for all of the memory dies, allowing for more rapid feedback on the processing parameters for manufacturing the memory dies and making the manufacturing process more efficient and accurate. In another set of embodiments, the machine learning is used to extrapolate limited metrology (e.g., critical dimension) test data to all of the memory die through interpolated virtual metrology data values.