An arrayed waveguide grating device includes an input coupler configured to receive a light signal and split the light signal into a plurality of output light signals. The device also includes a plurality of waveguides optically connected to the input coupler, each waveguide having a plurality of waveguide portions having respective sensitivities to variance in one or more parameters associated with operating of the optical arrayed grating device. Lengths of the respective portions are determined such that each waveguide applies a respective phase shift to the output light signal that propagates through the waveguide and the plurality of waveguides have at least substantially same change in phase shift with respective changes in the one or more parameters associated with operation of the device. An output coupler is optically connected to the plurality of waveguides to map respective light signals output from the plurality of waveguides to respective focal positions.

An imaging system includes an imaging device configured to image an imaging subject on an imaging optical axis, and a calculation unit configured to acquire data relating to a position and/or a size of the imaging subject based on image information acquired by the imaging device through the imaging. The calculation unit acquires change information relating to condition change in the imaging and/or change in the imaging subject on the image. The change is caused by interposition of a light transmitting member when the light transmitting member is interposed on the imaging optical axis during the imaging, and the calculation unit corrects the data based on the change information.

Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A sensing cable includes a first optical fiber, a second optical fiber that extends along the first optical fiber and that is spaced from the first optical fiber, and a transmitting material that includes an intervention portion present between the first optical fiber and the second optical fiber, the transmitting material being configured to transmit light from the first optical fiber to the second optical fiber through the intervention portion.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400° C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A transceiver separates wavelength-division-multiplexing (WDM) components into two groups, one of which is more sensitive to temperature than the other group. The temperature-sensitive group of optical components is implemented on a first substrate in the transceiver that has a lower thermo-optic coefficient than a second substrate in the transceiver, which contains the group of optical components that is less temperature sensitive. In particular, the first substrate, which may be glass, may include WDM components that convey optical signals having multiple carrier wavelengths. Moreover, the second substrate, such as a silicon substrate (e.g., a silicon-on-insulator platform), may include multiple parallel optical paths with optical components, in which a given optical path conveys an optical signal having a given carrier wavelength.

A silicon photonics based temperature-insensitive delay line interferometer (DLI). The DLI includes a first arm comprising a first length of a first material characterized by a first group index corresponding to a first phase delay to transfer a first light wave with a first peak frequency and a second arm comprising a second length of a second material characterized by a second group index corresponding to a second phase to transfer a second light wave with a second peak frequency with a time-delay difference relative to the first light wave. The first phase delay and the second phase delay are configured to change equally upon a change of temperature. The time-delay difference between the first light wave and the second light wave is set to be inversed value of a free spectral range (FSR) to align at least the first peak frequency to a channel of a designated frequency grid.

Photonic integrated circuits utilizing interferometric effects, such as wavelength multiplexers/demultiplexers, include a free-space coupling region having two core layers that have thermo-optic coefficients of opposite sign. The two core layers are configured to provide athermal or nearly-athermal operation. Described examples include integrated array waveguide grating devices and integrated echelle grating devices. Example material systems include LNOI and SOI.

A multi-path interference filter. The multi-path interference filter includes a first port waveguide, a second port waveguide, and an optical structure connecting the first port waveguide and the second port waveguide. The optical structure has a first optical path from the first port waveguide to the second port waveguide, and a second optical path, different from the first optical path, from the first port waveguide to the second port waveguide. The first optical path has a portion, having a first length, within hydrogenated amorphous silicon. The second optical path has a portion, having a second length, within crystalline silicon, and the second optical path has either no portion within hydrogenated amorphous silicon, or a portion, having a third length, within hydrogenated amorphous silicon, the third length being less than the first length.