G02B6/136

Cavity substrate having directional optoelectronic transmission channel and manufacturing method thereof

A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.

Cavity substrate having directional optoelectronic transmission channel and manufacturing method thereof

A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.

Silicon grating with amorphous silicon perturbation

A waveguide grating. The waveguide grating includes a rib composed of a first material. A first portion of the waveguide has a first layer on the rib, the first layer being composed of a second material; and a second layer on the first layer, the second layer being composed of a third material, the third material having a higher index of refraction than the first material.

Silicon grating with amorphous silicon perturbation

A waveguide grating. The waveguide grating includes a rib composed of a first material. A first portion of the waveguide has a first layer on the rib, the first layer being composed of a second material; and a second layer on the first layer, the second layer being composed of a third material, the third material having a higher index of refraction than the first material.

METHOD FOR PRODUCING A MICROOPTOELECTROMECHANICAL COMPONENT, AND CORRESPONDING MICROOPTOELECTROMECHANICAL COMPONENT
20230041107 · 2023-02-09 ·

A method for producing a microoptoelectromechanical component and a corresponding microoptoelectromechanical component. The microoptoelectromechanical component is equipped with a base substrate comprising a cavity which is formed therein and is closed by a covering substrate, an optical waveguide on the covering substrate above the cavity, which optical waveguide comprises a sheathed waveguide core, an electrical contact element in the region of the surrounding covering substrate, wherein a contact pad formed by an electrically conductive polysilicon layer is arranged underneath the electrical contact element, wherein the optical waveguide and the covering substrate located thereunder are divided into a stationary portion and a deflectable portion, which can be docked to the stationary portion by electrically deflecting the corresponding portion of the covering wafer.

GRADED PORE STRUCTURE WITHOUT PHASE MASK

A method to form a three-dimensional photonic crystal template with a gradient structure involves irradiating a photoresist composition of a thickness of at least 15 μm from at least four laser beams to yield a periodic patterned with a percolating matrix of mass in constructive volumes of a cured photoresist composition and destructive volumes of voids free of condensed matter where the proportion of constructive volume displays a gradient from the irradiated surface to the substrate after development. For a given light intensity, photoinitiator concentration in the photoresist composition, and a given thickness, by irradiating for a relatively short period, a three-dimensional photonic crystal template displaying a gradient having greater constructive volume proximal the air interface forms and a relatively long irradiation period results in a gradient having greater constructive volume proximal the substrate.

GRADED PORE STRUCTURE WITHOUT PHASE MASK

A method to form a three-dimensional photonic crystal template with a gradient structure involves irradiating a photoresist composition of a thickness of at least 15 μm from at least four laser beams to yield a periodic patterned with a percolating matrix of mass in constructive volumes of a cured photoresist composition and destructive volumes of voids free of condensed matter where the proportion of constructive volume displays a gradient from the irradiated surface to the substrate after development. For a given light intensity, photoinitiator concentration in the photoresist composition, and a given thickness, by irradiating for a relatively short period, a three-dimensional photonic crystal template displaying a gradient having greater constructive volume proximal the air interface forms and a relatively long irradiation period results in a gradient having greater constructive volume proximal the substrate.

MULTI-LAYERED OPTICAL INTEGRATED CIRCUIT ASSEMBLY
20230044697 · 2023-02-09 · ·

Described herein are stacked photonic integrated circuit (PIC) assemblies that include multiple layers of waveguides. The waveguides are formed of substantially monocrystalline materials, which cannot be repeatedly deposited. Layers of monocrystalline material are fabricated and repeatedly transferred onto the PIC structure using a layer transfer process, which involves bonding a monocrystalline material using a non-monocrystalline bonding material. Layers of isolation materials are also deposited or layer transferred onto the PIC assembly.

MULTI-LAYERED OPTICAL INTEGRATED CIRCUIT ASSEMBLY
20230044697 · 2023-02-09 · ·

Described herein are stacked photonic integrated circuit (PIC) assemblies that include multiple layers of waveguides. The waveguides are formed of substantially monocrystalline materials, which cannot be repeatedly deposited. Layers of monocrystalline material are fabricated and repeatedly transferred onto the PIC structure using a layer transfer process, which involves bonding a monocrystalline material using a non-monocrystalline bonding material. Layers of isolation materials are also deposited or layer transferred onto the PIC assembly.

Photonic semiconductor device and method of manufacture

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.