A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

Optical packages and methods of assembly are described in which various optical structures are integrated to increase efficiency. In an embodiment, an optical package includes an optical component with integrated guard fence to prevent the flow of adjacent opaque insulating material onto an optical surface. Additional optic structures are described such as light blocking structures within routing layer to reduce total internal reflection (TIR) within the routing layers, optical lenses, and the use of sacrificial layers to protect optical surfaces of the optical components during assembly.

Structures including an optical coupler and methods of fabricating a structure including an optical coupler. The structure includes a substrate, a first dielectric layer on the substrate, and an optical coupler having a first grating and a second grating. The first grating has a first plurality of segments positioned in a first level over the first dielectric layer. The second grating has a second plurality of segments positioned in a second level over the first dielectric layer. The second level differs in elevation above the first dielectric layer from the first level. The second plurality of segments are positioned in the second level to overlap with the first plurality of segments of the first grating, and the second plurality of segments comprise a metal. A second dielectric layer is positioned in a vertical direction between the first level and the second level.

A fiber optical transceiver includes a package, a plurality of lead frames provided with the package and protruding outward from the package, a first circuit board installed in the package and electrically connected to the plurality of lead frames, and an optical element provided on the first circuit board. The package includes a ceramic portion formed of ceramic and covered with a metallized film.

Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

An optical module with a dual layer printed circuit board assembly (PCBA) structure. The optical module includes a first casing and a second casing, and a first PCBA board and a second PCBA board located between the first casing and the second casing, a plurality of power components arranged on opposing surfaces of at least one of the first PCBA board and the second PCBA board, a layer of thermal superconducting medium of a bent arrangement including a first thermal conducting part and a second thermal conducting part arranged opposite to each other, the first thermal conducting part being thermally connected to the power component, and the second thermal conducting part being thermally connected to at least one of the first casing and the second casing, and at least one insulating layer arranged between the layer of thermal superconducting medium and the power components.

An opto-electric hybrid board includes: an electric circuit board including an insulation layer haying front arid back surfaces, arid electrical interconnect lines formed on the front surface of the insulation layer; and an optical waveguide having a substantially rectangular shape as seen in plan view and provided on the back surface of the insulation layer of the electric circuit board, with a metal layer therebetween. The optical waveguide has at least one end portion disposed in overlapping relation with the metal layer. The at least one end portion of the optical waveguide has corner portions. Each of the corner portions is radiused to have an arcuate shape or has a polygonal shape produced by arranging a plurality of obtuse-angled portions in a substantially arcuate configuration.

An optical module-member is provided, including: a layer-shaped optical waveguide; a light-emitting unit substrate including an insulating substrate, light-emitting element-mounting portions where light-emitting elements are configured to be mounted so as to be optically connected to the optical waveguide, and driving element-mounting portions which are electrically connected to the light-emitting element-mounting portions where driving elements for driving the light-emitting elements are configured to be mounted; and a light-receiving unit substrate which is separated from the light-emitting unit substrate, the light-receiving unit substrate including: an insulating substrate, light-receiving element-mounting portions where light-receiving elements are configured to be mounted so as to be optically connected to the optical waveguide, and signal amplification element-mounting portions which are electrically connected to the light-receiving element-mounting portions and where signal amplification elements for amplifying a signal from the light-receiving element are configured to be mounted.

An optical transceiver by hybrid multichip integration. The optical transceiver includes a PCB with a plurality of prefabricated surface bonding sites. A first chip includes a FOWLP package of multiple electronics devices embedded in a dielectric molding layer overlying a dielectric redistribution layer is disposed on the PCB by respectively bonding a plurality of conductor balls between the dielectric redistribution layer and the plurality of prefabricated surface bonding sites while exposing soldering material filled in multiple through-mold vias (TMVs) in the dielectric molding layer. The optical transceiver further includes a second chip configured as a Sipho die comprising photonics devices embedded in a SOI wafer substantially free from any electronics device process. The second chip is stacked over the first chip with multiple conductor bumps being bonded respectively to the soldering material in the multiple TMVs.